


Renesas Electronics Corporation
IDT71V416YL10Y
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
IDT71V416YL10Y Description
IDT71V416YL10Y Description
The IDT71V416YL10Y is a high-performance Static Random Access Memory (SRAM) IC designed by Renesas Electronics Corporation. This 4Mbit memory device is organized as 256K x 16, offering a robust solution for applications requiring fast access times and reliable data storage. The IDT71V416YL10Y features a parallel memory interface, ensuring efficient data transfer and compatibility with a wide range of systems. With an access time of 10 ns and a write cycle time of 10 ns, this SRAM IC delivers exceptional performance, making it suitable for demanding applications.
The IDT71V416YL10Y operates within a voltage range of 3V to 3.6V, ensuring compatibility with various power supply configurations. Its operating temperature range spans from 0°C to 70°C (TA), making it suitable for use in standard industrial environments. The device is housed in a surface-mount 44SOJ package, which is ideal for compact and space-constrained designs. Additionally, the IDT71V416YL10Y is REACH unaffected and has a moisture sensitivity level (MSL) of 3 (168 hours), ensuring compliance with environmental regulations and reliability in various storage conditions.
IDT71V416YL10Y Features
- Memory Organization: 256K x 16, providing a total memory size of 4Mbit.
- Access Time: 10 ns, ensuring rapid data retrieval.
- Write Cycle Time: 10 ns, facilitating quick data write operations.
- Memory Interface: Parallel, enabling efficient data transfer.
- Operating Temperature: 0°C to 70°C (TA), suitable for standard industrial applications.
- Voltage - Supply: 3V to 3.6V, ensuring compatibility with various power supply configurations.
- Mounting Type: Surface Mount, ideal for compact designs.
- Package: 44SOJ, offering a robust and space-efficient solution.
- Moisture Sensitivity Level (MSL): 3 (168 hours), ensuring reliability in storage conditions.
- REACH Status: REACH unaffected, ensuring compliance with environmental regulations.
IDT71V416YL10Y Applications
The IDT71V416YL10Y is ideal for applications that require fast access times and reliable data storage. Its 4Mbit capacity and 10 ns access time make it suitable for high-speed data processing and storage tasks. Some specific use cases include:
- Embedded Systems: Ideal for embedded systems requiring fast and reliable memory solutions.
- Networking Equipment: Suitable for networking devices where quick data access and transfer are critical.
- Telecommunications: Ideal for telecommunication applications requiring high-speed memory.
- Industrial Automation: Suitable for industrial automation systems where reliable and fast memory access is essential.
Conclusion of IDT71V416YL10Y
The IDT71V416YL10Y is a high-performance SRAM IC that offers exceptional speed and reliability. With its 4Mbit capacity, 10 ns access time, and parallel memory interface, it is well-suited for applications requiring fast data processing and storage. The device's surface-mount 44SOJ package and operating temperature range make it ideal for compact and standard industrial designs. Although the product is now obsolete, its unique features and performance benefits make it a valuable component for existing systems and legacy applications.



.png)











.png?x-oss-process=image/format,webp/resize,h_32)










