
Renesas Electronics Corporation
IDT71V416YS15Y
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IDT71V416YS15Y Description
IDT71V416YS15Y Description
The IDT71V416YS15Y is a 4Mbit Static Random Access Memory (SRAM) IC designed for high-performance applications. Manufactured by Renesas Electronics Corporation, this memory IC chip features a parallel memory interface and is organized as 256K x 16, providing a robust solution for systems requiring fast access times and reliable data storage. The IDT71V416YS15Y operates within a voltage range of 3V to 3.6V and has an access time of 15 ns, ensuring rapid data retrieval. It is housed in a 44-pin SOJ package and is suitable for surface-mount applications. This product is classified under HTSUS code 8542.32.0041 and has a Moisture Sensitivity Level (MSL) of 3, indicating it can be safely stored for up to 168 hours in a controlled environment. Although the product is now obsolete, its technical specifications and performance capabilities still make it a noteworthy option for certain legacy systems.
IDT71V416YS15Y Features
- Memory Organization: The IDT71V416YS15Y is organized as 256K x 16, offering a total memory capacity of 4Mbit. This configuration provides a balance between memory density and data width, making it suitable for applications requiring moderate to high data storage and retrieval.
- Access Time: With an access time of 15 ns, this SRAM IC ensures rapid data retrieval, which is crucial for applications requiring high-speed processing and real-time data access.
- Write Cycle Time: The write cycle time of 15 ns matches the access time, ensuring consistent performance for both read and write operations.
- Voltage Range: The IDT71V416YS15Y operates within a voltage range of 3V to 3.6V, providing flexibility in power supply requirements and compatibility with various systems.
- Memory Type: As a volatile memory, the IDT71V416YS15Y retains data only while power is supplied. This characteristic is ideal for applications where data needs to be frequently updated and accessed quickly.
- Package Type: The 44-pin SOJ package is designed for surface-mount technology, offering a compact and reliable solution suitable for modern printed circuit board (PCB) designs.
- Operating Temperature: The operating temperature range of 0°C to 70°C (TA) makes this IC suitable for a wide range of environmental conditions, ensuring stable performance in various applications.
- Moisture Sensitivity Level: With an MSL of 3 (168 hours), the IDT71V416YS15Y can be safely stored and handled in controlled environments, reducing the risk of moisture-related damage.
IDT71V416YS15Y Applications
The IDT71V416YS15Y is ideal for applications requiring fast, reliable memory solutions. Its 15 ns access time and 256K x 16 organization make it suitable for systems that demand high-speed data processing and storage. Some specific use cases include:
- Embedded Systems: The IDT71V416YS15Y can be used in embedded systems where fast memory access is critical for real-time processing and control.
- Networking Equipment: In networking applications, the SRAM's high-speed capabilities ensure efficient data buffering and routing.
- Industrial Control Systems: The robustness and reliability of the IDT71V416YS15Y make it suitable for industrial control systems where data integrity and quick access are paramount.
- Telecommunications: The memory IC can be used in telecommunication equipment for fast data storage and retrieval, supporting high-speed communication protocols.
Conclusion of IDT71V416YS15Y
The IDT71V416YS15Y, despite being obsolete, remains a notable memory IC due to its high-speed performance and reliable data storage capabilities. Its 15 ns access time and 256K x 16 organization provide a balance between memory density and data width, making it suitable for a variety of applications. The compact 44-pin SOJ package and surface-mount technology ensure compatibility with modern PCB designs. Although the product is no longer in production, its technical specifications and performance benefits make it a viable option for legacy systems and applications where high-speed SRAM is required.



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