Renesas Electronics Corporation_ISL6608IBZ
original

Renesas Electronics Corporation
ISL6608IBZ

730-ISL6608IBZ
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IC GATE DRVR HALF-BRIDGE 8SOIC

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ISO9001
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ISO45001
ISO14001
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Tech Specifications

Rise / Fall Time (Typ)
8ns, 8ns
Gate Type
N-Channel MOSFET
Product Status
Obsolete
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Voltage - Supply
4.5V ~ 5.5V
REACH Status
REACH Unaffected
Mfr
Renesas Electronics Corporation
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ISL6608IBZ Description

ISL6608IBZ Description

The ISL6608IBZ is a half-bridge gate driver IC designed for power management applications, manufactured by Renesas Electronics Corporation. This device is part of the Power Management (PMIC) category and is housed in an 8SOIC package. It features a synchronous channel type and is designed to operate within a supply voltage range of 4.5V to 5.5V. The ISL6608IBZ provides two drivers with a peak output current of 2A for both sourcing and sinking, ensuring robust performance in demanding applications. The rise and fall times are typically 8ns, contributing to its high-speed operation. The high side voltage capability extends up to 22V (bootstrap), making it suitable for a wide range of voltage requirements. Despite its obsolescence, the ISL6608IBZ remains a reliable choice for specific legacy systems and applications where its unique features are advantageous.

ISL6608IBZ Features

  • Synchronous Channel Type: Ensures efficient power delivery and reduced switching losses.
  • Supply Voltage Range: Operates within 4.5V to 5.5V, providing flexibility in power supply design.
  • High-Speed Operation: With a typical rise and fall time of 8ns, it supports high-frequency switching applications.
  • Dual Drivers: Each capable of handling a peak output current of 2A, offering robust performance.
  • High Side Voltage: Capable of up to 22V (bootstrap), suitable for various voltage levels.
  • Surface Mount Packaging: The 8SOIC package is ideal for compact designs and surface mount technology (SMT) processes.
  • Compliance: REACH unaffected and ROHS3 compliant, ensuring environmental and regulatory standards are met.
  • Moisture Sensitivity Level: MSL 3 (168 hours), suitable for standard manufacturing processes.

ISL6608IBZ Applications

The ISL6608IBZ is well-suited for applications requiring efficient power management and high-speed switching. Its dual drivers and high side voltage capability make it ideal for:

  • DC-DC Converters: Efficiently driving MOSFETs in half-bridge configurations for power conversion.
  • Motor Control: Providing reliable gate drive for motor control applications, ensuring precise control and high efficiency.
  • Power Supplies: Suitable for various power supply designs where high-frequency operation and robust performance are critical.
  • Legacy Systems: Ideal for maintaining and upgrading existing systems where the ISL6608IBZ's unique features are already integrated.

Conclusion of ISL6608IBZ

The ISL6608IBZ, despite being obsolete, remains a reliable and efficient gate driver IC for power management applications. Its synchronous channel type, dual drivers, and high-speed operation make it a standout choice for demanding applications. With a supply voltage range of 4.5V to 5.5V and a high side voltage capability up to 22V (bootstrap), it offers flexibility and robust performance. The ISL6608IBZ is particularly well-suited for DC-DC converters, motor control, and power supplies, ensuring precise control and high efficiency. For legacy systems and specific applications where its unique features are advantageous, the ISL6608IBZ continues to be a valuable component in the electronics industry.

FAQ

What voltage specification is listed for ISL6608IBZ?
The listed voltage-related specification for ISL6608IBZ is 4.5V ~ 5.5V.
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What operating temperature range does ISL6608IBZ support?
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