Renesas Electronics Corporation
ISL6612AECBZ

730-ISL6612AECBZ
PDF Datasheet
IC GATE DRVR HALF-BRIDGE 8SOIC

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ISO9001
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ISO45001
ISO14001
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Tech Specifications

Rise / Fall Time (Typ)
26ns, 18ns
Gate Type
N-Channel MOSFET
Product Status
Obsolete
Supplier Device Package
8-SOIC-EP
Package / Case
8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Supply
10.8V ~ 13.2V
REACH Status
REACH Unaffected
Mfr
Renesas Electronics Corporation
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ISL6612AECBZ Description

ISL6612AECBZ Description

The ISL6612AECBZ is a half-bridge gate driver IC designed by Renesas Electronics Corporation, a leading manufacturer of semiconductor products. This device is part of the ISL6612 family and is housed in an 8SOIC package, making it suitable for surface-mount applications. Despite being marked as obsolete, the ISL6612AECBZ remains a robust choice for driving power MOSFETs in various high-voltage and high-current applications. It operates within a supply voltage range of 10.8V to 13.2V and can handle peak output currents of 1.25A for sourcing and 2A for sinking. The device features synchronous channel type operation and supports a high-side voltage up to 36V, making it ideal for applications requiring high voltage handling capabilities. The ISL6612AECBZ also complies with REACH and ROHS3 standards, ensuring environmental safety and regulatory compliance.

ISL6612AECBZ Features

  • Supply Voltage Range: The ISL6612AECBZ operates within a supply voltage range of 10.8V to 13.2V, providing flexibility in power supply design.
  • Peak Output Current: It supports peak output currents of 1.25A for sourcing and 2A for sinking, making it suitable for driving high-power MOSFETs.
  • High-Side Voltage: The device can handle a maximum high-side voltage of 36V, enabling it to operate in high-voltage environments.
  • Synchronous Channel Type: The synchronous operation ensures efficient power delivery and reduced switching losses.
  • Rise/Fall Time: With typical rise and fall times of 26ns and 18ns respectively, the ISL6612AECBZ ensures fast and efficient switching.
  • Operating Temperature: The device is designed to operate within a temperature range of 0°C to 125°C (TJ), making it suitable for a wide range of industrial and automotive applications.
  • Compliance and Safety: The ISL6612AECBZ is REACH unaffected and ROHS3 compliant, ensuring it meets environmental and safety standards.
  • Moisture Sensitivity Level: With an MSL of 3 (168 hours), the device is suitable for surface-mount assembly processes.

ISL6612AECBZ Applications

The ISL6612AECBZ is ideal for applications requiring efficient power delivery and high-voltage handling. Specific use cases include:

  • Motor Control: Driving high-power MOSFETs in motor control applications, ensuring efficient and reliable operation.
  • Power Supplies: Used in DC-DC converters and power supplies where high efficiency and fast switching are critical.
  • Automotive Electronics: Suitable for automotive applications due to wide its operating temperature range and high reliability.
  • Industrial Equipment: Ideal for industrial applications where high voltage and current handling capabilities are required.

Conclusion of ISL6612AECBZ

The ISL6612AECBZ, despite being marked as obsolete, remains a reliable and efficient gate driver IC for high-voltage and high-current applications. Its robust design, wide supply voltage range, and high peak output current capabilities make it a versatile choice for various industrial and automotive applications. The device's compliance with environmental and safety standards further enhances its appeal. For engineers and designers looking for a reliable gate driver solution, the ISL6612AECBZ offers a proven and effective option.

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