Renesas Electronics Corporation_ISL6612ECBZ
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Renesas Electronics Corporation
ISL6612ECBZ

730-ISL6612ECBZ
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IC GATE DRVR HALF-BRIDGE 8SOIC

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ISO9001
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ISO45001
ISO14001
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Tech Specifications

Rise / Fall Time (Typ)
26ns, 18ns
Gate Type
N-Channel MOSFET
Product Status
Obsolete
Supplier Device Package
8-SOIC-EP
Package / Case
8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Supply
10.8V ~ 13.2V
REACH Status
REACH Unaffected
Mfr
Renesas Electronics Corporation
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ISL6612ECBZ Description

ISL6612ECBZ Description

The ISL6612ECBZ is a half-bridge gate driver IC designed by Renesas Electronics Corporation, a leading semiconductor manufacturer known for its innovative and reliable products. This IC is specifically engineered to provide robust performance in driving high-power MOSFETs and IGBTs, making it ideal for a variety of power conversion applications. The ISL6612ECBZ features a synchronous channel type and comes in an 8SOIC package, which is suitable for surface mount applications.

ISL6612ECBZ Features

  • Supply Voltage Range: The ISL6612ECBZ operates within a supply voltage range of 10.8V to 13.2V, ensuring compatibility with a wide range of power supply systems.
  • High Side Voltage - Max (Bootstrap): The maximum high-side voltage capability of 36V allows for efficient operation in high-voltage applications.
  • Peak Output Current: The IC can source up to 1.25A and sink up to 2A of peak current, providing ample power to drive high-current loads.
  • Rise and Fall Time: With typical rise and fall times of 26ns and 18ns respectively, the ISL6612ECBZ ensures fast and efficient switching, minimizing switching losses.
  • Operating Temperature: The operating temperature range of 0°C to 125°C (TJ) makes it suitable for use in a variety of environmental conditions.
  • Moisture Sensitivity Level (MSL): The MSL of 3 (168 Hours) indicates that the IC is designed to withstand moderate levels of moisture exposure, enhancing its reliability in humid environments.
  • Compliance: The ISL6612ECBZ is REACH unaffected and ROHS3 compliant, ensuring it meets stringent environmental and safety standards.
  • Packaging: The tube packaging format facilitates easy handling and integration into automated assembly processes.

ISL6612ECBZ Applications

The ISL6612ECBZ is well-suited for applications requiring efficient power conversion and control, such as:

  • DC-DC Converters: Ideal for driving high-power MOSFETs in DC-DC conversion circuits, ensuring high efficiency and minimal power loss.
  • Motor Control: Provides robust gate drive for motor control applications, enhancing performance and reliability.
  • Solar Inverters: Suitable for driving power switches in solar inverter systems, contributing to efficient energy conversion.
  • Industrial Power Supplies: Enhances the performance of industrial power supplies by providing reliable gate drive for high-current applications.

Conclusion of ISL6612ECBZ

The ISL6612ECBZ gate driver IC from Renesas Electronics Corporation stands out for its robust performance and versatile features. Its wide supply voltage range, high peak output current, and fast rise and fall times make it an excellent choice for demanding power conversion applications. The IC's compliance with environmental and safety standards further enhances its appeal. Despite being marked as obsolete, the ISL6612ECBZ remains a reliable option for engineers seeking a high-performance gate driver solution.

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