Renesas Electronics Corporation_ISL6613ACB
original

Renesas Electronics Corporation
ISL6613ACB

730-ISL6613ACB
PDF Datasheet
IC GATE DRVR HALF-BRIDGE 8SOIC

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Tech Specifications

Rise / Fall Time (Typ)
26ns, 18ns
Gate Type
N-Channel MOSFET
Product Status
Obsolete
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Voltage - Supply
10.8V ~ 13.2V
REACH Status
REACH Unaffected
Mfr
Renesas Electronics Corporation
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ISL6613ACB Description

This electronic device regards Tube method as the top priority. This ISL6613ACB packaging method makes it simple and quick to package big quantities of powdered commodities. This ISL6613ACB is produced by this Renesas Electronics Corporation in order to provide enough products to meet consumers’ demand. The blueprint of this Renesas Electronics Corporation is to keep pace with the growth of world’s leading level of science and technology. This ISL6613ACB belongs to Gate Drivers ICs category. It’s previous category pertains to Power Management (PMIC). Complete power supply systems can be implemented using Power Management Integrated Circuits (PMICs). It combines several voltage regulators and control circuits onto a single chip. They simplify and cost-effectively manage system power management while reducing component count and board area. This ISL6613ACB is a great fit for embedded processing in a variety of applications. They are includes edge computing, the Internet of Things (IoT), industrial and medical IoT, electric vehicles (EVs), and autonomous cars.

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