Renesas Electronics Corporation_ISL6613BECB
original

Renesas Electronics Corporation
ISL6613BECB

730-ISL6613BECB
PDF Datasheet
IC GATE DRVR HALF-BRIDGE 8SOIC

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ISO45001
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Tech Specifications

Rise / Fall Time (Typ)
26ns, 18ns
Gate Type
N-Channel MOSFET
Product Status
Obsolete
Supplier Device Package
8-SOIC-EP
Package / Case
8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Supply
7V ~ 13.2V
REACH Status
REACH Unaffected
Mfr
Renesas Electronics Corporation
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ISL6613BECB Description

ISL6613BECB Description

The ISL6613BECB is a half-bridge gate driver IC designed by Renesas Electronics Corporation, a leading manufacturer in the electronics industry. This device is part of the Power Management Integrated Circuit (PMIC) category and is housed in an 8SOIC package. It is designed for surface mount applications and offers robust performance in a compact form factor. The ISL6613BECB features a synchronous channel type and is capable of operating within a supply voltage range of 7V to 13.2V. It supports a maximum high-side voltage of 36V, making it suitable for a variety of power management applications.

ISL6613BECB Features

The ISL6613BECB boasts several key technical specifications that set it apart from similar models. It features a peak output current of 1.25A for sourcing and 2A for sinking, ensuring efficient power delivery. The rise and fall times are typically 26ns and 18ns, respectively, providing rapid switching capabilities. The operating temperature range of 0°C to 125°C (TJ) ensures reliable performance in various environmental conditions. Additionally, the device has a moisture sensitivity level (MSL) of 1, indicating it is unaffected by moisture, making it suitable for a wide range of industrial applications.

ISL6613BECB Applications

The ISL6613BECB is ideal for applications requiring efficient power management and high reliability. Its half-bridge configuration makes it suitable for driving high-power MOSFETs in motor control, power supplies, and renewable energy systems. The synchronous channel type ensures minimal power loss and high efficiency, making it a preferred choice for applications where energy efficiency is critical. The device's ability to operate within a wide supply voltage range and its robust high-side voltage capability further enhance its versatility.

Conclusion of ISL6613BECB

In summary, the ISL6613BECB is a versatile and reliable gate driver IC designed for demanding power management applications. Its robust technical specifications, including high peak output current, rapid switching times, and wide operating temperature range, make it an excellent choice for engineers seeking efficient and reliable power solutions. Despite its obsolete status, the ISL6613BECB remains a valuable component for applications where its unique features and performance benefits are required.

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