Renesas Electronics Corporation_NE3503M04-T2B-A
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Renesas Electronics Corporation
NE3503M04-T2B-A

285-NE3503M04-T2B-A
PDF Datasheet
RF MOSFET HFET 2V M04

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Tech Specifications

Current Rating (Amps)
70mA
ECCN
EAR99
Current - Test
10 mA
Voltage - Rated
4 V
Product Status
Obsolete
Power - Output
-
Supplier Device Package
M04
Series
-
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NE3503M04-T2B-A Description

NE3503M04-T2B-A Description

The NE3503M04-T2B-A is an RF MOSFET HFET designed and manufactured by Renesas Electronics Corporation. This high-frequency transistor operates at a frequency of 12 GHz and offers a noise figure of 0.45 dB. It is packaged in a M04 package and is compliant with the ROHS3 standard. The product is currently classified as obsolete, but it still holds significant value in specific applications due to its unique features and performance benefits.

NE3503M04-T2B-A Features

  • High Frequency Operation: The NE3503M04-T2B-A operates at a frequency of 12 GHz, making it suitable for high-frequency applications such as communication systems and radar technology.
  • Low Noise Figure: With a noise figure of 0.45 dB, this HFET provides excellent signal-to-noise performance, ensuring clear and reliable transmission of signals.
  • High Gain: The NE3503M04-T2B-A boasts a gain of 12 dB, which is crucial for amplifying signals without significant distortion.
  • Robust Current and Voltage Ratings: This MOSFET has a current rating of 70 mA and is rated for a voltage of 4 V, making it suitable for applications requiring high current and voltage handling.
  • Technology: The NE3503M04-T2B-A utilizes HFET technology, which is known for its high-frequency performance and low noise characteristics.

NE3503M04-T2B-A Applications

The NE3503M04-T2B-A is ideal for various applications due to its high-frequency operation, low noise figure, and high gain. Some specific use cases include:

  1. Communication Systems: The high-frequency operation and low noise figure make this HFET suitable for use in communication systems, such as cellular base stations and satellite communication equipment.
  2. Radar Technology: The NE3503M04-T2B-A's high-frequency performance and low noise figure are essential for radar systems that require accurate signal detection and processing.
  3. Amplifiers: This MOSFET can be used as an amplifier in various electronic devices, such as audio equipment and radio transmitters, due to its high gain and current handling capabilities.

Conclusion of NE3503M04-T2B-A

While the NE3503M04-T2B-A is classified as obsolete, it still offers unique features and advantages over similar models, making it a valuable component in specific applications. Its high-frequency operation, low noise figure, and high gain make it an ideal choice for communication systems, radar technology, and amplifiers. Despite its obsolescence, the NE3503M04-T2B-A remains a reliable and effective solution for high-frequency electronic applications.

FAQ

What is NE3503M04-T2B-A?
NE3503M04-T2B-A is a RF FETs, MOSFETs from Renesas Electronics Corporation. This product page provides its main specifications, pricing information, availability, and inquiry options.
What package or case is NE3503M04-T2B-A available in?
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