Renesas Electronics Corporation Tariff Inquiry

R1LP0108ESF-5SI#B0

R1LP0108ESF-5SI#B0 Description

The R1LP0108ESF-5SI#B0 is a high-performance Static Random Access Memory (SRAM) IC designed by Renesas Electronics Corporation. This memory IC features a 1Mbit capacity organized as 128K x 8, providing a significant amount of storage for various applications. The R1LP0108ESF-5SI#B0 operates with a parallel memory interface, ensuring efficient data transfer and high-speed performance. It supports a supply voltage range of 4.5V to 5.5V, making it suitable for a wide range of power supply configurations. The memory is volatile, meaning it retains data only while power is applied, which is ideal for applications requiring frequent data updates and low power consumption during standby.

R1LP0108ESF-5SI#B0 Features

• Memory Organization: 128K x 8, providing a total memory size of 1Mbit.
• Access Time: Fast 55 ns access time ensures rapid data retrieval.
• Write Cycle Time: 55 ns write cycle time for both word and page operations, ensuring efficient data writing.
• Technology: SRAM technology offers non-destructive read operations and low power consumption.
• Mounting Type: Surface mount, allowing for compact and reliable integration into modern electronic designs.
• Package: 32TSOP package, which is ideal for applications requiring a small footprint.
• Voltage - Supply: 4.5V to 5.5V, providing flexibility in power supply options.
• Compliance: ROHS3 compliant and REACH unaffected, ensuring environmental and regulatory standards are met.
• Moisture Sensitivity Level (MSL): Level 2 (1 Year), ensuring the component is protected from moisture during storage and handling.

R1LP0108ESF-5SI#B0 Applications

The R1LP0108ESF-5SI#B0 is ideal for a variety of applications where fast access times and reliable data storage are critical. Some specific use cases include:

• Embedded Systems: Provides fast and reliable memory for microcontroller-based systems.
• Industrial Automation: Ensures quick data access and storage in industrial control systems.
• Telecommunications: Supports high-speed data buffering in communication equipment.
• Consumer Electronics: Enhances performance in devices such as routers, modems, and set-top boxes.
• Automotive Electronics: Ideal for automotive control units and infotainment systems where fast data access is essential.

Conclusion of R1LP0108ESF-5SI#B0

The R1LP0108ESF-5SI#B0 from Renesas Electronics Corporation is a versatile and high-performance SRAM IC, offering a combination of fast access times, reliable data storage, and a compact surface-mount package. Its 1Mbit capacity, organized as 128K x 8, makes it suitable for a wide range of applications, from embedded systems to industrial automation. The 55 ns access and write cycle times ensure efficient data handling, while the 4.5V to 5.5V supply voltage range provides flexibility in power supply design. The R1LP0108ESF-5SI#B0 is also compliant with ROHS3 and REACH standards, making it an environmentally responsible choice. With its moisture sensitivity level of 2 (1 Year), it is well-suited for storage and handling in various environments. Overall, the R1LP0108ESF-5SI#B0 is an excellent choice for applications requiring fast, reliable, and compact memory solutions.