Renesas Electronics Corporation Tariff Inquiry

R1RW0416DSB-2LR#B0

R1RW0416DSB-2LR#B0 Description

The R1RW0416DSB-2LR#B0 is a high-performance, 4Mbit SRAM memory IC designed by Renesas Electronics Corporation. This device features a parallel memory interface and is organized as 256K x 16, providing a robust solution for applications requiring fast access times and reliable data storage. The memory type is volatile, ensuring data is retained only while power is supplied, which is ideal for systems that require frequent updates and dynamic data handling.

R1RW0416DSB-2LR#B0 Features

• Memory Organization: 256K x 16, offering a total memory size of 4Mbit.
• Access Time: 12 ns, ensuring rapid data retrieval and efficient system performance.
• Write Cycle Time: 12 ns for both word and page operations, providing consistent and reliable write speeds.
• Voltage - Supply: Operates within a range of 3V to 3.6V, making it suitable for low-power applications.
• Technology: SRAM, known for its fast access times and low power consumption.
• Mounting Type: Surface Mount, allowing for compact and efficient integration into modern electronic designs.
• Package: 44TSOP II, a robust and widely-used package type that ensures reliable mechanical and electrical performance.
• Moisture Sensitivity Level (MSL): Level 3 (168 Hours), ensuring the device can withstand moderate levels of humidity during manufacturing processes.
• RoHS Status: ROHS3 Compliant, meeting stringent environmental standards and ensuring the device is suitable for use in a wide range of applications.
• ECCN: 3A991B2A, indicating compliance with export regulations and facilitating international use.
• HTSUS: 8542.32.0041, facilitating customs clearance and ensuring compliance with tariff classifications.

R1RW0416DSB-2LR#B0 Applications

The R1RW0416DSB-2LR#B0 is ideal for a variety of applications where fast access times and reliable data storage are critical. Its 12 ns access time and 12 ns write cycle time make it particularly well-suited for high-speed data processing and real-time systems. Some specific use cases include:

• Embedded Systems: Providing fast and reliable memory for microcontrollers and embedded processors.
• Networking Equipment: Enhancing the performance of routers, switches, and other networking devices by providing rapid data access.
• Industrial Automation: Ensuring reliable data storage and retrieval in industrial control systems and automation equipment.
• Medical Devices: Offering fast and accurate data handling in medical imaging and diagnostic equipment.
• Telecommunications: Supporting high-speed data transmission and processing in telecommunication infrastructure.

Conclusion of R1RW0416DSB-2LR#B0

The R1RW0416DSB-2LR#B0 is a versatile and high-performance SRAM memory IC that offers significant advantages over similar models. Its fast access and write cycle times, combined with a robust 44TSOP II package and compliance with environmental and export regulations, make it an ideal choice for a wide range of applications. Despite its obsolete status, the R1RW0416DSB-2LR#B0 remains a reliable and efficient memory solution for systems requiring fast and dynamic data handling.