Renesas Electronics Corporation_RJK0451DPB-00#J5
original

Renesas Electronics Corporation
RJK0451DPB-00#J5

278-RJK0451DPB-00#J5
PDF Datasheet
MOSFET N-CH 40V 35A LFPAK
18 Weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
2010 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 4.5 V
Product Status
Active
Supplier Device Package
LFPAK
Drain to Source Voltage (Vdss)
40 V
Power Dissipation (Max)
45W (Tc)
Package / Case
SC-100, SOT-669
Show More

RJK0451DPB-00#J5 Description

RJK0451DPB-00#J5 Description

The RJK0451DPB-00#J5 is a high-performance MOSFET (Metal Oxide) device manufactured by Renesas Electronics Corporation. This N-channel MOSFET is designed for applications requiring high power dissipation and efficient current handling. With a maximum drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) of 35A at 25°C, the RJK0451DPB-00#J5 is ideal for demanding power electronics applications.

RJK0451DPB-00#J5 Features

  • High Input Capacitance (Ciss): The RJK0451DPB-00#J5 boasts a maximum input capacitance of 2010 pF at 10V, ensuring fast switching speeds and improved performance in high-frequency applications.
  • Low Gate Charge (Qg): With a maximum gate charge of 14 nC at 4.5V, this MOSFET minimizes power loss during switching, contributing to higher efficiency.
  • Robust Power Dissipation: Capable of handling up to 45W of power dissipation, the RJK0451DPB-00#J5 is suitable for high-power applications.
  • Low Rds On: The maximum Rds On of 7mOhm at 17.5A and 10V ensures low on-resistance and minimal power loss.
  • Compliance with Industry Standards: The RJK0451DPB-00#J5 is compliant with RoHS3 and REACH regulations, making it an environmentally friendly choice.
  • Temperature Tolerance: Designed to operate at a junction temperature of 150°C, this MOSFET is suitable for high-temperature applications.

RJK0451DPB-00#J5 Applications

The RJK0451DPB-00#J5 is ideal for a variety of power electronics applications, including:

  • Power Supplies: Due to its high power dissipation and low Rds On, the RJK0451DPB-00#J5 is well-suited for power supply designs.
  • Motor Controls: The high current handling capability makes it an excellent choice for motor control applications.
  • Automotive Electronics: The RJK0451DPB-00#J5's robustness and temperature tolerance make it suitable for automotive electronics, such as electric vehicle powertrains.
  • Industrial Controls: Its high voltage and current ratings make it ideal for industrial control systems requiring high power and reliability.

Conclusion of RJK0451DPB-00#J5

The RJK0451DPB-00#J5 is a high-performance MOSFET that offers a combination of high power dissipation, low on-resistance, and compliance with industry standards. Its unique features make it an excellent choice for a wide range of power electronics applications, from power supplies to automotive electronics. With its robust performance and reliability, the RJK0451DPB-00#J5 is a valuable addition to any engineer's toolkit.

FAQ

What is the mounting type of RJK0451DPB-00#J5?
RJK0451DPB-00#J5 uses a Surface Mount mounting style based on the listed product specifications.
Are there related or alternative parts for RJK0451DPB-00#J5?
What voltage specification is listed for RJK0451DPB-00#J5?
What is the standard lead time for RJK0451DPB-00#J5?
What operating temperature range does RJK0451DPB-00#J5 support?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ