ROHM Semiconductor Tariff Inquiry

2SA1812T100Q

2SA1812T100Q Description

The 2SA1812T100Q is a PNP single bipolar transistor manufactured by ROHM Semiconductor. It is designed for high-performance applications that require a combination of high power handling and high-frequency operation. With a maximum collector-emitter breakdown voltage of 400V and a maximum collector current of 500mA, this device is well-suited for use in power switching and amplification circuits. The 2SA1812T100Q is available in a surface-mount MPT3 package, making it ideal for use in compact, high-density electronic designs.

2SA1812T100Q Features

• Operating Temperature: 150°C (TJ)
• Frequency - Transition: 12MHz
• Current - Collector (Ic) (Max): 500 mA
• Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
• ECCN: EAR99
• Mounting Type: Surface Mount
• Product Status: Obsolete
• Voltage - Collector Emitter Breakdown (Max): 400 V
• Supplier Device Package: MPT3
• Transistor Type: PNP
• Power - Max: 500 mW
• REACH Status: REACH Unaffected
• Mfr: Rohm Semiconductor
• Current - Collector Cutoff (Max): 1µA (ICBO)
• HTSUS: 8541.21.0095
• Package: Tape & Reel (TR)
• RoHS Status: ROHS3 Compliant
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 5V
• Base Product Number: 2SA1812
• Moisture Sensitivity Level (MSL): 1 (Unlimited)

2SA1812T100Q Applications

The 2SA1812T100Q's high power handling and high-frequency capabilities make it an ideal choice for a variety of applications, including:

1. Power switching and amplification circuits in consumer electronics, such as audio amplifiers and power supplies.
2. Industrial control systems, where high voltage and current switching is required.
3. Automotive electronics, such as ignition systems and power window controls.
4. Telecommunications equipment, where high-frequency signal amplification is necessary.

Conclusion of 2SA1812T100Q

The 2SA1812T100Q is a high-performance PNP single bipolar transistor that offers a unique combination of high power handling and high-frequency operation. Its surface-mount MPT3 package makes it well-suited for use in compact, high-density electronic designs. While the device is now considered obsolete, it remains a popular choice for applications that require its specific combination of performance characteristics. The 2SA1812T100Q's high collector-emitter breakdown voltage and maximum collector current make it an ideal choice for power switching and amplification circuits in a variety of industries, including consumer electronics, industrial control systems, automotive electronics, and telecommunications equipment.