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2SAR553P5T100
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2SAR553P5T100 Description
2SAR553P5T100 Description
The 2SAR553P5T100 from ROHM Semiconductor is a high-performance PNP bipolar junction transistor (BJT) designed for surface-mount applications. With a collector-emitter voltage (Vce) rating of 50V and a maximum collector current (Ic) of 2A, this transistor is optimized for power-efficient switching and amplification in compact electronic circuits. Its low Vce saturation voltage (400mV @ 35mA, 700mA) ensures minimal power loss, while a transition frequency (fT) of 320MHz enables high-speed operation. Packaged in MPT3 (Tape & Reel), it is ideal for automated assembly processes.
2SAR553P5T100 Features
- High Current Handling: Supports up to 2A continuous collector current, making it suitable for power management tasks.
- Low Saturation Voltage: 400mV @ 35mA, 700mA reduces energy dissipation in switching applications.
- High DC Current Gain (hFE): Min 180 @ 50mA, 2V ensures efficient signal amplification.
- Wide Operating Temperature: Up to 150°C (TJ) for reliable performance in harsh environments.
- Compact & RoHS-Compliant: MPT3 package (3-pin) with ROHS3 compliance meets modern environmental standards.
- Low Leakage Current: 1µA (ICBO) cutoff current enhances power efficiency in standby modes.
2SAR553P5T100 Applications
- Power Management: Ideal for DC-DC converters, voltage regulators, and load switches due to its low saturation voltage.
- Motor Control: Used in H-bridge circuits and driver stages for small motors.
- Audio Amplification: Suitable for Class-AB/B amplifiers in portable devices.
- High-Speed Switching: 320MHz fT makes it effective in RF and signal processing circuits.
- Automotive & Industrial Systems: 150°C rating ensures durability in automotive ECUs and industrial controllers.
Conclusion of 2SAR553P5T100
The 2SAR553P5T100 stands out for its high current capability, low saturation loss, and compact form factor, making it a versatile choice for modern electronics. Its balance of speed, efficiency, and thermal resilience positions it as a superior alternative to generic PNP transistors in power-sensitive and space-constrained designs. Whether for consumer electronics, automotive systems, or industrial automation, this transistor delivers reliable performance under demanding conditions.



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