ROHM Semiconductor_2SB1132T100Q
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ROHM Semiconductor
2SB1132T100Q

276-2SB1132T100Q
PDF Datasheet
TRANS PNP 32V 1A MPT3
23 Weeks

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Tech Specifications

Operating Temperature
150°C (TJ)
Frequency - Transition
150MHz
Current - Collector (Ic) (Max)
1 A
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Not For New Designs
Voltage - Collector Emitter Breakdown (Max)
32 V
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2SB1132T100Q Description

2SB1132T100Q Description

The 2SB1132T100Q is a PNP single bipolar transistor designed and manufactured by ROHM Semiconductor. This component is part of the Single Bipolar Transistors category and is known for its robust performance and reliability. With an operating temperature range of 150°C (TJ) and a frequency transition of 150MHz, the 2SB1132T100Q is capable of handling a maximum collector current (Ic) of 1A. It also boasts a low Vce saturation of 500mV at 50mA and 500mA, ensuring efficient power management.

2SB1132T100Q Features

  • Technical Specifications: The 2SB1132T100Q is designed with a voltage collector-emitter breakdown (Max) of 32V and a maximum power rating of 2W. It is mounted using surface mount technology and is packaged in a tape & reel (TR) format for easy integration into manufacturing processes. The device is compliant with ROHS3 standards, indicating its adherence to environmental regulations.

  • Performance Benefits: This transistor stands out with a minimum DC current gain (hFE) of 120 at 100mA and 3V, which is crucial for maintaining signal integrity in high-frequency applications. Its moisture sensitivity level (MSL) is rated at 1 (Unlimited), making it suitable for a wide range of environments without the need for special handling.

  • Unique Advantages: The 2SB1132T100Q is not for new designs, indicating that it is a mature and reliable component with a proven track record. Its EAR99 ECCN classification and REACH unaffected status simplify international trade and regulatory compliance.

2SB1132T100Q Applications

The 2SB1132T100Q is ideal for applications that require high power handling and efficient signal amplification. It is particularly suited for use in:

  • Amplifier Circuits: Due to its high current and power ratings, the 2SB1132T100Q is perfect for audio and radio frequency amplifiers where high fidelity and power efficiency are paramount.
  • Power Electronics: In power electronics, this transistor can be used in switching applications where low saturation voltage is beneficial for reducing power losses.
  • Industrial Controls: Its robustness and high operating temperature make it a good fit for industrial control systems that demand reliable performance in harsh environments.

Conclusion of 2SB1132T100Q

In conclusion, the 2SB1132T100Q is a high-performance PNP bipolar transistor that offers a combination of high power handling, low saturation voltage, and compliance with environmental standards. Despite its status as not for new designs, it remains a reliable choice for applications where proven performance and regulatory compliance are critical. Its unique features make it an excellent choice for a variety of electronic devices, from consumer electronics to industrial control systems.

FAQ

What voltage specification is listed for 2SB1132T100Q?
The listed voltage-related specification for 2SB1132T100Q is 32 V.
Is 2SB1132T100Q currently in stock?
What operating temperature range does 2SB1132T100Q support?
What is 2SB1132T100Q?
What is the mounting type of 2SB1132T100Q?
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