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2SB1181TLR

2SB1181TLR Description

The 2SB1181TLR is a PNP single bipolar transistor offered by ROHM Semiconductor. It features a maximum collector-emitter breakdown voltage of 80V and a maximum collector current of 1A. This device is designed for surface mount applications and is packaged in a CPT3 package. The 2SB1181TLR is not recommended for new designs, but it can still be used in existing applications. It is compliant with the RoHS3 directive and is unaffected by REACH regulations.

2SB1181TLR Features

• PNP transistor type
• Maximum collector-emitter breakdown voltage of 80V
• Maximum collector current of 1A
• Surface mount packaging (CPT3)
• Operating temperature range of -55°C to 150°C (TJ)
• Transition frequency of 100MHz
• Maximum Vce saturation of 400mV @ 50mA, 500mA
• Maximum power dissipation of 10W
• DC current gain (hFE) of 120 @ 100mA, 3V
• Moisture sensitivity level (MSL) of 1 (unlimited)

2SB1181TLR Applications

The 2SB1181TLR is ideal for use in various electronic applications that require a high-voltage, high-current PNP transistor. Some specific use cases include:

1. Audio amplifiers and power amplifiers
2. Switching regulators and power supplies
3. Motor control and drive circuits
4. RF power amplifiers and transmitters
5. Industrial control and automation systems

Conclusion of 2SB1181TLR

The 2SB1181TLR is a high-performance PNP bipolar transistor that offers excellent electrical characteristics and reliability. Its high breakdown voltage and current capabilities make it suitable for a wide range of applications in the audio, power, and industrial sectors. Although it is not recommended for new designs, the 2SB1181TLR remains a valuable option for existing applications that require its unique combination of performance and features.