ROHM Semiconductor_2SB1184TLQ
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ROHM Semiconductor
2SB1184TLQ

276-2SB1184TLQ
PDF Datasheet
TRANS PNP 60V 3A CPT3

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Tech Specifications

Operating Temperature
150°C (TJ)
Frequency - Transition
70MHz
Current - Collector (Ic) (Max)
3 A
Vce Saturation (Max) @ Ib, Ic
1V @ 200mA, 2A
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Not For New Designs
Voltage - Collector Emitter Breakdown (Max)
60 V
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2SB1184TLQ Description

2SB1184TLQ Description

The 2SB1184TLQ is a PNP bipolar transistor from ROHM Semiconductor, designed for high-performance applications that require robust power handling and high-frequency operation. With a maximum collector-emitter breakdown voltage of 60V and a maximum collector current of 3A, this device is well-suited for demanding power electronics applications.

2SB1184TLQ Features

  • High Power Handling: The 2SB1184TLQ can handle up to 1W of power, making it ideal for high-power amplifiers and switches.
  • High-Frequency Operation: With a transition frequency of 70MHz, this transistor is suitable for high-speed digital and analog circuits.
  • Low Saturation Voltage: The low Vce(sat) of 1V at 2A ensures high efficiency in saturation mode, reducing power dissipation.
  • High Current Gain: A minimum DC current gain (hFE) of 120 at 500mA and 3V provides excellent current amplification.
  • Robust Temperature Range: The 2SB1184TLQ operates over a wide temperature range of -55°C to 150°C (TJ), making it suitable for harsh environments.
  • Surface Mount Package: The CPT3 package allows for easy integration into surface mount applications, reducing footprint and improving manufacturing efficiency.
  • Compliance: This device is REACH unaffected and RoHS3 compliant, ensuring environmental and regulatory compliance.

2SB1184TLQ Applications

The 2SB1184TLQ is ideal for a variety of applications where high power and high-frequency performance are required:

  • Power Amplifiers: Due to its high power handling and low saturation voltage, this transistor is well-suited for audio and RF power amplifiers.
  • Switching Applications: The high current and power ratings make it ideal for high-current switching applications in industrial and automotive electronics.
  • RF and Microwave Circuits: The high transition frequency and low noise characteristics make it suitable for RF and microwave circuits in communication systems.
  • Automotive Electronics: The wide temperature range and robustness make it suitable for various automotive electronic systems, such as engine control units and power management systems.

Conclusion of 2SB1184TLQ

The 2SB1184TLQ from ROHM Semiconductor is a high-performance PNP bipolar transistor that offers a unique combination of high power handling, high-frequency operation, and low saturation voltage. Its robust temperature range, surface mount package, and compliance with environmental regulations make it an excellent choice for a wide range of power electronics applications. While it is not recommended for new designs, it remains a reliable option for existing systems that require its specific performance characteristics.

FAQ

What package or case is 2SB1184TLQ available in?
2SB1184TLQ is available in the TO-252-3, DPAK (2 Leads + Tab), SC-63 package / case.
Are there related or alternative parts for 2SB1184TLQ?
What operating temperature range does 2SB1184TLQ support?
What voltage specification is listed for 2SB1184TLQ?
What is the mounting type of 2SB1184TLQ?
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