ROHM Semiconductor_2SB1189T100R
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ROHM Semiconductor
2SB1189T100R

276-2SB1189T100R
PDF Datasheet
TRANS PNP 80V 0.7A MPT3
13 Weeks

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Tech Specifications

Operating Temperature
150°C (TJ)
Frequency - Transition
100MHz
Current - Collector (Ic) (Max)
700 mA
Vce Saturation (Max) @ Ib, Ic
400mV @ 50mA, 500mA
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Not For New Designs
Voltage - Collector Emitter Breakdown (Max)
80 V
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2SB1189T100R Description

2SB1189T100R Description

The 2SB1189T100R is a PNP single bipolar transistor designed and manufactured by ROHM Semiconductor. This device is known for its robust performance and reliability, making it suitable for a wide range of applications. With an operating temperature of 150°C (TJ), it can handle high-temperature environments, ensuring consistent performance even under extreme conditions. The 2SB1189T100R boasts a maximum collector-emitter breakdown voltage of 80 V and a maximum power dissipation of 2 W, making it ideal for high-voltage and high-power applications.

2SB1189T100R Features

  • Operating Temperature: 150°C (TJ) for reliable performance in high-temperature environments.
  • Frequency - Transition: 100MHz, suitable for high-frequency applications.
  • Current - Collector (Ic) (Max): 700 mA, providing ample current capacity.
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA, ensuring low saturation voltage for efficient operation.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V, offering high current gain for better amplification.
  • Mounting Type: Surface Mount, facilitating easy integration into various electronic devices.
  • RoHS Status: ROHS3 Compliant, adhering to environmental regulations.
  • REACH Status: REACH Unaffected, ensuring compliance with European chemical regulations.

2SB1189T100R Applications

The 2SB1189T100R is ideal for applications that require high-voltage and high-power handling capabilities, such as:

  • Power Amplifiers: Utilizing its high breakdown voltage and power dissipation, the 2SB1189T100R can efficiently amplify signals in power amplifiers.
  • Switching Applications: Its low saturation voltage makes it suitable for use in switching circuits, where low power consumption is crucial.
  • Automotive Electronics: The high operating temperature and robust performance make it suitable for use in automotive electronics, where reliability and durability are paramount.

Conclusion of 2SB1189T100R

The 2SB1189T100R is a versatile PNP single bipolar transistor that offers a combination of high-voltage and high-power handling capabilities, making it an excellent choice for a variety of applications. Its compliance with environmental regulations and high operating temperature further enhance its appeal for use in demanding electronic devices. While it is marked as "Not For New Designs," it remains a reliable option for existing designs that require its specific performance characteristics.

FAQ

What operating temperature range does 2SB1189T100R support?
2SB1189T100R has an operating temperature range of 150°C (TJ).
What is the mounting type of 2SB1189T100R?
What package or case is 2SB1189T100R available in?
What voltage specification is listed for 2SB1189T100R?
What is 2SB1189T100R?
Availability (In Stock : 2134 )
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150+ $0.17813 $26.72
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