ROHM Semiconductor

2SB1386T100R  

Single Bipolar Transistors

2SB1386T100R Description

The 2SB1386T100R is a PNP single bipolar transistor from ROHM Semiconductor, designed for high-performance applications requiring robust power handling and fast switching capabilities. With an operating temperature range of up to 150°C (TJ), this device is well-suited for demanding environments. It features a maximum collector-emitter breakdown voltage of 20V, a maximum collector current of 5A, and a maximum power dissipation of 2W, making it ideal for high-current, high-voltage applications.

2SB1386T100R Features

• High Operating Temperature: The 2SB1386T100R can operate at temperatures up to 150°C (TJ), making it suitable for use in harsh environments.
• Fast Switching: With a transition frequency of 120MHz, this device offers fast switching capabilities, ideal for high-speed applications.
• High Current Handling: The 2SB1386T100R can handle a maximum collector current of 5A, making it suitable for high-current applications.
• Low Saturation Voltage: The device has a low Vce saturation voltage of 1V @ 100mA, 4A, which helps reduce power dissipation and improve efficiency.
• Surface Mount Packaging: The MPT3 package allows for easy integration into surface-mount applications, reducing footprint and improving manufacturing efficiency.
• Compliance: The 2SB1386T100R is compliant with ROHS3 standards, making it suitable for environmentally conscious applications.

2SB1386T100R Applications

The 2SB1386T100R is ideal for a variety of high-power, high-speed applications, including:

• Power Amplifiers: The high current and power handling capabilities make it suitable for use in power amplifiers.
• Switching Regulators: The fast switching speed and low saturation voltage make it ideal for use in switching regulators.
• Motor Control: The high current and power handling capabilities, combined with the fast switching speed, make it suitable for motor control applications.
• RF Applications: The high transition frequency makes it suitable for use in RF applications, such as transmitters and receivers.

Conclusion of 2SB1386T100R

The 2SB1386T100R from ROHM Semiconductor is a high-performance PNP single bipolar transistor, offering a unique combination of high current handling, fast switching capabilities, and low saturation voltage. Its surface-mount packaging and compliance with ROHS3 standards make it an ideal choice for a wide range of high-power, high-speed applications. While it is not recommended for new designs, the 2SB1386T100R remains a reliable choice for existing applications requiring its specific performance characteristics.

2SB1386T100R Documents

Download datasheets and manufacturer documentation for 2SB1386T100R

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Product Change Notification (PDF)