ROHM Semiconductor_2SB1386T100R
original

ROHM Semiconductor
2SB1386T100R

276-2SB1386T100R
PDF Datasheet
TRANS PNP 20V 5A MPT3
13 Weeks

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Tech Specifications

Configuration
Single Dual Collector
PPAP
No
Product Status
Not For New Designs
Voltage - Collector Emitter Breakdown (Max)
20 V
Automotive
No
Supplier Package
MPT
Transistor Type
PNP
Package / Case
TO-243AA
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2SB1386T100R Description

2SB1386T100R Description

The 2SB1386T100R is a PNP single bipolar transistor from ROHM Semiconductor, designed for high-performance applications requiring robust power handling and fast switching capabilities. With an operating temperature range of up to 150°C (TJ), this device is well-suited for demanding environments. It features a maximum collector-emitter breakdown voltage of 20V, a maximum collector current of 5A, and a maximum power dissipation of 2W, making it ideal for high-current, high-voltage applications.

2SB1386T100R Features

  • High Operating Temperature: The 2SB1386T100R can operate at temperatures up to 150°C (TJ), making it suitable for use in harsh environments.
  • Fast Switching: With a transition frequency of 120MHz, this device offers fast switching capabilities, ideal for high-speed applications.
  • High Current Handling: The 2SB1386T100R can handle a maximum collector current of 5A, making it suitable for high-current applications.
  • Low Saturation Voltage: The device has a low Vce saturation voltage of 1V @ 100mA, 4A, which helps reduce power dissipation and improve efficiency.
  • Surface Mount Packaging: The MPT3 package allows for easy integration into surface-mount applications, reducing footprint and improving manufacturing efficiency.
  • Compliance: The 2SB1386T100R is compliant with ROHS3 standards, making it suitable for environmentally conscious applications.

2SB1386T100R Applications

The 2SB1386T100R is ideal for a variety of high-power, high-speed applications, including:

  • Power Amplifiers: The high current and power handling capabilities make it suitable for use in power amplifiers.
  • Switching Regulators: The fast switching speed and low saturation voltage make it ideal for use in switching regulators.
  • Motor Control: The high current and power handling capabilities, combined with the fast switching speed, make it suitable for motor control applications.
  • RF Applications: The high transition frequency makes it suitable for use in RF applications, such as transmitters and receivers.

Conclusion of 2SB1386T100R

The 2SB1386T100R from ROHM Semiconductor is a high-performance PNP single bipolar transistor, offering a unique combination of high current handling, fast switching capabilities, and low saturation voltage. Its surface-mount packaging and compliance with ROHS3 standards make it an ideal choice for a wide range of high-power, high-speed applications. While it is not recommended for new designs, the 2SB1386T100R remains a reliable choice for existing applications requiring its specific performance characteristics.

FAQ

Is 2SB1386T100R currently in stock?
Yes. 2SB1386T100R currently shows 323 unit(s) in stock.
What package or case is 2SB1386T100R available in?
What operating temperature range does 2SB1386T100R support?
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