ROHM Semiconductor_2SB1561T100Q
original

ROHM Semiconductor
2SB1561T100Q

276-2SB1561T100Q
TRANS PNP 60V 2A MPT3
13 Weeks

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ISO9001
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ISO45001
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Tech Specifications

Configuration
Single Dual Collector
PPAP
No
Product Status
Not For New Designs
Voltage - Collector Emitter Breakdown (Max)
60 V
Automotive
No
Supplier Package
MPT
Transistor Type
PNP
Package / Case
TO-243AA
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2SB1561T100Q Description

2SB1561T100Q Description

The 2SB1561T100Q is a PNP single bipolar transistor offered by ROHM Semiconductor. It is designed to deliver high performance in a variety of electronic applications. With an operating temperature range of 150°C (TJ) and a frequency transition of 200MHz, this device is well-suited for high-speed and high-temperature applications. The 2SB1561T100Q features a maximum collector current (Ic) of 2 A and a maximum power rating of 2 W, making it suitable for power management and amplification tasks. The device is packaged in a surface mount MPT3 package and is available in tape & reel (TR) packaging for automated assembly.

2SB1561T100Q Features

  • PNP transistor type for versatile circuit design
  • 150°C (TJ) operating temperature for high-temperature applications
  • 200MHz frequency transition for high-speed operation
  • 2 A maximum collector current (Ic) for power management
  • 2 W maximum power rating for efficient energy use
  • Surface mount MPT3 package for compact design
  • Tape & reel (TR) packaging for automated assembly
  • 60 V maximum collector-emitter breakdown voltage for reliable operation
  • 120 minimum DC current gain (hFE) at 500mA, 2V for consistent performance
  • Moisture Sensitivity Level (MSL) 1 for unlimited storage

2SB1561T100Q Applications

The 2SB1561T100Q is ideal for a variety of applications where high speed, high temperature, and high power are required. Some specific use cases include:

  1. Power management circuits in consumer electronics
  2. Amplification stages in audio and communication systems
  3. Motor control and drive circuits in industrial automation
  4. Temperature compensation circuits in sensor applications
  5. Signal processing and conditioning in high-speed data transmission systems

Conclusion of 2SB1561T100Q

The 2SB1561T100Q from ROHM Semiconductor is a high-performance PNP single bipolar transistor that offers a unique combination of high speed, high temperature, and high power capabilities. Its advanced features, such as a 150°C (TJ) operating temperature, 200MHz frequency transition, and 2 A maximum collector current, make it an ideal choice for a wide range of applications. With its compact surface mount MPT3 package and tape & reel (TR) packaging, the 2SB1561T100Q is well-suited for automated assembly and compact circuit designs. Despite being marked as "Not For New Designs," this device remains a reliable option for existing applications that require its specific performance characteristics.

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