ROHM Semiconductor_2SB1580T100
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ROHM Semiconductor
2SB1580T100

276-2SB1580T100
TRANS PNP DARL 100V 2A MPT3
18 Weeks

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Tech Specifications

Configuration
Single
PPAP
No
Product Status
Not For New Designs
Voltage - Collector Emitter Breakdown (Max)
100 V
Automotive
No
Supplier Package
MPT
Transistor Type
PNP - Darlington
Package / Case
TO-243AA
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2SB1580T100 Description

2SB1580T100 Description

The 2SB1580T100 is a PNP Darlington transistor offered by ROHM Semiconductor, designed for high-performance applications. With an operating temperature range of 150°C (TJ), it ensures reliable operation even in high-temperature environments. The 50MHz transition frequency makes it suitable for high-speed switching applications. The 2A maximum collector current and 100V collector-emitter breakdown voltage provide ample power handling capabilities.

2SB1580T100 Features

  • Technical Specifications: The 2SB1580T100 boasts a low Vce saturation of 1.5V @ 1mA, 1A, ensuring high efficiency in low-voltage applications. Its 2W maximum power dissipation and 10µA (ICBO) maximum collector cutoff current contribute to its robust performance. The device's 1000 minimum DC current gain (hFE) @ 1A, 2V ensures consistent operation across different loads.

  • Performance Benefits: The 2SB1580T100's surface-mount packaging and MPT3 supplier device package make it ideal for space-constrained applications. Its REACH unaffected status and ROHS3 compliance ensure environmental friendliness and regulatory compliance.

  • Unique Features & Advantages: Compared to similar models, the 2SB1580T100 stands out with its high operating temperature, making it suitable for harsh environments. Its high collector current and breakdown voltage provide superior power handling capabilities.

2SB1580T100 Applications

The 2SB1580T100 is ideal for various applications, including:

  • High-Speed Switching: Its 50MHz transition frequency makes it suitable for high-speed switching applications in digital circuits.
  • Power Amplification: The 2A maximum collector current and 100V collector-emitter breakdown voltage make it ideal for power amplification applications in audio and radio frequency circuits.
  • Automotive Electronics: Its high operating temperature and robust performance make it suitable for automotive electronics, such as engine control units and powertrain systems.

Conclusion of 2SB1580T100

In conclusion, the 2SB1580T100 is a high-performance PNP Darlington transistor from ROHM Semiconductor, offering superior technical specifications and performance benefits. Its unique features, such as high operating temperature and power handling capabilities, make it an ideal choice for high-speed switching, power amplification, and automotive electronics applications. Despite being marked as "Not For New Designs," the 2SB1580T100 remains a reliable option for existing designs that require its specific performance characteristics.

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