

ROHM Semiconductor
2SC4082T106P
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2SC4082T106P Description
2SC4082T106P Description
The 2SC4082T106P is a Bipolar RF Transistor from ROHM Semiconductor, designed for high-frequency applications. This NPN transistor offers a maximum collector-emitter breakdown voltage of 20V and a maximum collector current of 50mA. With a power rating of 200mW and a transition frequency of 1.5GHz, it is suitable for various RF applications. The device is surface-mountable and comes in a UMT3 package, making it ideal for compact designs.
2SC4082T106P Features
- Operating Temperature: 150°C (TJ), ensuring reliable performance in high-temperature environments.
- Frequency - Transition: 1.5GHz, suitable for high-frequency applications.
- Current - Collector (Ic) (Max): 50mA, providing sufficient current for various applications.
- Voltage - Collector Emitter Breakdown (Max): 20V, offering a high breakdown voltage for increased reliability.
- Transistor Type: NPN, suitable for a wide range of applications.
- Power - Max: 200mW, capable of handling moderate power levels.
- Noise Figure (dB Typ @ f): 4.5dB @ 200MHz, providing low noise performance.
- DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 10V, ensuring consistent performance.
2SC4082T106P Applications
The 2SC4082T106P is ideal for various applications, including:
- RF Amplifiers: Due to its high transition frequency and low noise figure, it is suitable for use in RF amplifiers.
- Communication Systems: Its high breakdown voltage and power rating make it suitable for communication systems requiring high reliability.
- Automotive Applications: The device's high operating temperature and moisture sensitivity level make it suitable for automotive applications.
- Industrial Control Systems: Its high power rating and reliability make it suitable for use in industrial control systems.
Conclusion of 2SC4082T106P
The 2SC4082T106P is a versatile Bipolar RF Transistor from ROHM Semiconductor, offering a combination of high performance and reliability. Its high transition frequency, low noise figure, and high breakdown voltage make it suitable for a wide range of applications, including RF amplifiers, communication systems, automotive applications, and industrial control systems. While it is not recommended for new designs, it remains a reliable choice for existing applications where its unique features and advantages are required.



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