ROHM Semiconductor_2SD1766T100Q
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ROHM Semiconductor
2SD1766T100Q

276-2SD1766T100Q
PDF Datasheet
TRANS NPN 32V 2A MPT3
23 Weeks

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Tech Specifications

Operating Temperature
150°C (TJ)
Frequency - Transition
100MHz
Current - Collector (Ic) (Max)
2 A
Vce Saturation (Max) @ Ib, Ic
800mV @ 200mA, 2A
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Not For New Designs
Voltage - Collector Emitter Breakdown (Max)
32 V
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2SD1766T100Q Description

2SD1766T100Q Description

The 2SD1766T100Q is a high-performance NPN bipolar transistor offered by ROHM Semiconductor. This device is designed for a wide range of applications, including power switching and amplification in various electronic devices. With its robust technical specifications, the 2SD1766T100Q delivers reliable performance and efficiency.

2SD1766T100Q Features

  • Operating Temperature: The 2SD1766T100Q can operate at a maximum junction temperature of 150°C, ensuring reliable performance in high-temperature environments.
  • Frequency - Transition: This transistor has a transition frequency of 100MHz, making it suitable for high-speed switching applications.
  • Current - Collector (Ic) (Max): The maximum collector current is 2 A, allowing the device to handle significant power loads.
  • Vce Saturation (Max) @ Ib, Ic: The maximum Vce saturation voltage is 800mV at 200mA and 2A, ensuring low power dissipation and high efficiency.
  • Voltage - Collector Emitter Breakdown (Max): The 2SD1766T100Q can withstand a maximum collector-emitter voltage of 32V, making it suitable for high-voltage applications.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: The minimum DC current gain is 120 at 500mA and 3V, providing consistent performance.
  • Power - Max: The maximum power dissipation is 2W, allowing the device to handle higher power loads without overheating.
  • Moisture Sensitivity Level (MSL): The 2SD1766T100Q has an MSL of 1, indicating unlimited storage time before reflow soldering.

2SD1766T100Q Applications

The 2SD1766T100Q is ideal for various applications due to its high performance and robust specifications:

  1. Power Switching: The high current and voltage ratings make it suitable for power switching applications in electronic devices.
  2. Amplification: The high transition frequency and current gain make it an excellent choice for amplification circuits.
  3. Automotive Electronics: The high operating temperature and voltage ratings make it suitable for automotive electronics, where reliability and performance are crucial.
  4. Industrial Control Systems: The 2SD1766T100Q can be used in industrial control systems that require high power handling and switching capabilities.

Conclusion of 2SD1766T100Q

The 2SD1766T100Q is a versatile and high-performance NPN bipolar transistor from ROHM Semiconductor. Its unique combination of high current and voltage ratings, high transition frequency, and low power dissipation make it an ideal choice for a wide range of applications, including power switching, amplification, automotive electronics, and industrial control systems. While it is not recommended for new designs, the 2SD1766T100Q remains a reliable option for existing applications that require its specific performance characteristics.

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What is 2SD1766T100Q?
2SD1766T100Q is a Single Bipolar Transistors from ROHM Semiconductor. This product page provides its main specifications, pricing information, availability, and inquiry options.
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