ROHM Semiconductor_BM3G007MUV-LBE2
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ROHM Semiconductor
BM3G007MUV-LBE2

726-BM3G007MUV-LBE2
PDF Datasheet
NANO CAP, ECOGAN, 650V 70M 2MHZ,
18 Weeks

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Tech Specifications

Category
Power Stage
PCB changed
46
Output Type
N-Channel
ECCN (US)
EAR99
Output Configuration
Low Side
PPAP
No
Product Status
Active
Current - Output (Max)
-
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BM3G007MUV-LBE2 Description

BM3G007MUV-LBE2 Description

The BM3G007MUV-LBE2 is a high-performance power management integrated circuit (PMIC) from Rohm Semiconductor, designed for applications requiring efficient and reliable power delivery. This device is part of the Nano Cap™ series, known for its innovative and compact design, making it ideal for space-constrained applications. The BM3G007MUV-LBE2 features a low-side output configuration with a load voltage capability of up to 650V, making it suitable for high-voltage applications. It has a typical on-resistance (Rds On) of 70mOhm, ensuring minimal power loss and high efficiency. The device operates within a supply voltage range of 6.25V to 30V, providing flexibility in power supply design. It is housed in a VQFN046V8080 package, which supports surface mount technology (SMT) and wettable flank mounting, ensuring robust mechanical stability and ease of integration into modern PCB designs.

BM3G007MUV-LBE2 Features

The BM3G007MUV-LBE2 offers several unique features that set it apart from similar models. It includes over-temperature and under-voltage lockout (UVLO) fault protection mechanisms, ensuring reliable operation under varying environmental conditions and preventing damage from voltage fluctuations. The device also features power good and slew rate controlled outputs, which enhance system stability and reduce transient effects. The BM3G007MUV-LBE2 is available in a tape and reel (TR) package, facilitating efficient manufacturing processes and ensuring high-quality standards. Its moisture sensitivity level (MSL) is rated at 3 (168 hours), making it suitable for a wide range of manufacturing environments.

BM3G007MUV-LBE2 Applications

The BM3G007MUV-LBE2 is ideal for applications that require high efficiency and reliability in power management. Its high load voltage capability and low on-resistance make it suitable for high-power, high-voltage applications such as industrial power supplies, automotive electronics, and renewable energy systems. The device's compact design and surface mount compatibility also make it ideal for consumer electronics and IoT devices where space is a critical constraint. The BM3G007MUV-LBE2's fault protection features ensure robust performance in harsh environments, making it a reliable choice for aerospace and defense applications.

Conclusion of BM3G007MUV-LBE2

The BM3G007MUV-LBE2 from Rohm Semiconductor is a versatile and high-performance PMIC that offers significant advantages over similar models. Its high load voltage capability, low on-resistance, and compact design make it an excellent choice for a wide range of applications. The device's advanced fault protection features and reliable performance ensure that it can withstand challenging operating conditions, making it a dependable solution for modern power management needs. Whether used in industrial, automotive, or consumer electronics, the BM3G007MUV-LBE2 delivers the efficiency and reliability required for today's demanding applications.

FAQ

Are there related or alternative parts for BM3G007MUV-LBE2?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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