ROHM Semiconductor_BS2100F-E2
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ROHM Semiconductor
BS2100F-E2

730-BS2100F-E2
IC DVR IGBT/MOSFET

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Tech Specifications

Manufacturer
Rohm Semiconductor
Series
-
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Driven Configuration
Half-Bridge
Channel Type
Independent
Number of Drivers
2
Gate Type
IGBT, MOSFET (N-Channel)
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BS2100F-E2 Description

BS2100F-E2 Description

The BS2100F-E2 is a high-performance, dual-channel independent driver IC designed for driving IGBTs and MOSFETs, manufactured by Rohm Semiconductor. This device is part of the Power Management (PMIC) category and is ideal for applications requiring efficient power switching and control. Despite its obsolete product status, the BS2100F-E2 remains a reliable choice for specific power management needs.

BS2100F-E2 Features

  • Supply Voltage Range: Operates within a wide supply voltage range of 10V to 18V, making it suitable for various power supply configurations.
  • High Side Voltage: The maximum high side voltage (bootstrap) is rated at 600V, ensuring robust performance in high-voltage applications.
  • Rise and Fall Time: Typical rise and fall times of 200ns and 100ns respectively, providing fast and efficient switching capabilities.
  • Logic Voltage Levels: Logic input levels (VIL, VIH) are specified at 1V and 2.6V, ensuring compatibility with a wide range of control signals.
  • Output Current: Peak output current capabilities of 60mA (source) and 130mA (sink) per channel, supporting high-current switching applications.
  • Mounting Type: Surface mount packaging (Tape & Reel) for easy integration into modern PCB designs.
  • Compliance: The BS2100F-E2 is REACH unaffected and RoHS3 compliant, meeting stringent environmental and safety standards.
  • Moisture Sensitivity Level: MSL 1 (Unlimited), indicating excellent resistance to moisture, suitable for use in various environmental conditions.

BS2100F-E2 Applications

The BS2100F-E2 is well-suited for that applications demand precise control and high efficiency in power switching. Some specific use cases include:

  • Power Supplies: Ideal for driving IGBTs and MOSFETs in power supplies, providing efficient switching and control.
  • Motor Control: Suitable for motor control applications where high-voltage and high-current switching are required.
  • Inverters: Effective in inverters for renewable energy systems, ensuring reliable power conversion.
  • Industrial Equipment: Applicable in various industrial equipment where robust power management is essential.

Conclusion of BS2100F-E2

The BS2100F-E2 from Rohm Semiconductor is a versatile and reliable dual-channel independent driver IC designed for driving IGBTs and MOSFETs. Its wide supply voltage range, high side voltage capability, and fast switching times make it an excellent choice for high-voltage and high-current applications. Despite its obsolete status, the BS2100F-E2 remains a valuable component for specific power management needs, offering compliance with environmental standards and robust performance in various conditions.

FAQ

What is BS2100F-E2?
BS2100F-E2 is a Gate Drivers ICs from ROHM Semiconductor. This product page provides its main specifications, pricing information, availability, and inquiry options.
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