ROHM Semiconductor

BS2101F-E2

BS2101F-E2 Description

The BS2101F-E2 is a high-performance gate driver IC designed for high-side and low-side applications, manufactured by ROHM Semiconductor. This device is part of the Power Management (PMIC) category and is housed in an 8SOP package. It features a synchronous channel type and is optimized for driving power MOSFETs in various power conversion applications. The BS2101F-E2 supports a supply voltage range of 10V to 18V and offers a peak output current of 60mA for sourcing and 130mA for sinking. It also boasts a maximum high-side voltage (bootstrap) of 600V, making it suitable for high-voltage applications.

BS2101F-E2 Features

• Synchronous Channel Type: The BS2101F-E2 is designed with a synchronous channel type, ensuring efficient power delivery and reduced switching losses.
• Wide Supply Voltage Range: With a supply voltage range of 10V to 18V, the BS2101F-E2 is versatile and can operate in various power supply environments.
• High Peak Output Current: The device provides a peak output current of 60mA for sourcing and 130mA for sinking, making it suitable for driving high-current loads.
• High-Side Voltage Capability: The BS2101F-E2 supports a maximum high-side voltage (bootstrap) of 600V, enabling it to handle high-voltage applications with ease.
• Fast Rise and Fall Times: The typical rise and fall times of 60ns and 20ns, respectively, ensure rapid switching and minimal switching losses.
• Logic Voltage Compatibility: The logic voltage levels of VIL at 1V and VIH at 2.6V make the BS2101F-E2 compatible with a wide range of digital control signals.
• Surface Mount Packaging: The 8SOP package is ideal for surface mount applications, providing a compact and reliable solution for modern electronic designs.
• Compliance and Reliability: The BS2101F-E2 is REACH unaffected and RoHS3 compliant, ensuring it meets the latest environmental and safety standards. It also has a moisture sensitivity level (MSL) of 1, making it suitable for unlimited storage conditions.

BS2101F-E2 Applications

The BS2101F-E2 is ideal for a variety of applications where high efficiency and reliability are required. Some specific use cases include:

• Power Supplies: The BS2101F-E2 is well-suited for driving power MOSFETs in DC-DC converters and other power supply applications, providing efficient power conversion and control.
• Motor Control: The high-side and low-side gate driving capabilities make it suitable for motor control applications, where precise control of power MOSFETs is necessary.
• Industrial Equipment: The wide supply voltage range and high peak output current make the BS2101F-E2 a reliable choice for industrial applications requiring robust power management solutions.
• Automotive Electronics: The high-voltage capability and fast switching times are beneficial in automotive applications, where high reliability and efficiency are paramount.

Conclusion of BS2101F-E2

The BS2101F-E2 from ROHM Semiconductor is a robust and versatile gate driver IC designed for high-side and low-side applications. Its wide supply voltage range, high peak output current, and high-side voltage capability make it suitable for a variety of power management applications. The fast rise and fall times, along with its compatibility with various logic voltage levels, ensure efficient and reliable performance. While the product is marked as obsolete, its technical specifications and performance benefits continue to make it a valuable component for existing designs and applications requiring high-voltage gate driving solutions.