ROHM Semiconductor_BU4S11G2-TR
original

ROHM Semiconductor
BU4S11G2-TR

705-BU4S11G2-TR
PDF Datasheet
IC GATE NAND 1CH 2-INP 5SSOP
20 Weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Maximum Propagation Delay Time @ Maximum CL (ns)
30(Typ)@15V|40(Typ)@10V|85(Typ)@5V
PPAP
No
Product Status
Active
Automotive
No
Supplier Package
SSOP
Maximum High Level Output Current (mA)
-3.4(Min)
Package / Case
SC-74A, SOT-753
Absolute Propagation Delay Time (ns)
85(Typ)
Show More

BU4S11G2-TR Description

BU4S11G2-TR Description

The BU4S11G2-TR is a high-performance NAND gate integrated circuit (IC) manufactured by ROHM Semiconductor, designed for a wide range of applications in the electronics industry. This 2-input, 1-circuit NAND gate is part of the 4S series and offers exceptional performance with a maximum propagation delay of 30ns at 15V and 50pF. The device is surface-mountable and is available in a tape and reel (TR) packaging, making it suitable for automated assembly processes.

BU4S11G2-TR Features

  • Logic Type: NAND Gate
  • Max Propagation Delay: 30ns @ 15V, 50pF
  • Voltage - Supply: 3V to 16V
  • Input Logic Levels: Low (1.5V to 4V), High (3.5V to 11V)
  • Current - Quiescent (Max): 1 µA
  • Current - Output High, Low: 3.4mA, 3.4mA
  • Mounting Type: Surface Mount
  • Package: Tape & Reel (TR)
  • Number of Inputs: 2
  • Number of Circuits: 1
  • Series: 4S
  • Product Status: Active
  • ECCN: EAR99
  • HTSUS: 8542.39.0001
  • REACH Status: REACH Unaffected
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

BU4S11G2-TR Applications

The BU4S11G2-TR is ideal for applications that require high-speed signal processing and low power consumption. Some specific use cases include:

  1. Digital Circuits: Due to its low propagation delay, the BU4S11G2-TR is suitable for digital circuits where fast signal processing is crucial.
  2. Automotive Electronics: The device's wide supply voltage range makes it suitable for automotive electronics, where voltage variations are common.
  3. Industrial Control Systems: The BU4S11G2-TR can be used in industrial control systems for signal processing and logic operations.
  4. Telecommunications: The low power consumption and high-speed performance make it suitable for telecommunications equipment.

Conclusion of BU4S11G2-TR

The BU4S11G2-TR from ROHM Semiconductor is a high-performance NAND gate IC that offers a unique combination of low power consumption, fast propagation delay, and a wide supply voltage range. Its surface-mount packaging and tape and reel format make it ideal for automated assembly processes. With its exceptional performance and compliance with various industry standards, the BU4S11G2-TR is a reliable choice for a wide range of applications in the electronics industry.

FAQ

Does BU4S11G2-TR have quantity-based pricing?
Yes. BU4S11G2-TR currently has 5 pricing tier(s), starting from 50 units.
What operating temperature range does BU4S11G2-TR support?
What is the standard lead time for BU4S11G2-TR?
What is BU4S11G2-TR?
Is BU4S11G2-TR currently in stock?
Availability (In Stock : 17956 )
Quantity Unit Price Ext. Price
50+ $0.43372 $21.69
150+ $0.39772 $59.66
500+ $0.35143 $175.72
3000+ $0.33085 $992.55
6000+ $0.31715 $1902.90
ADD TO CART
QUICK ORDER
Unit Price $0.00000
Subtotal $0.00
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ