ROHM Semiconductor_DTA114EETL
original

ROHM Semiconductor
DTA114EETL

292-DTA114EETL
PDF Datasheet
TRANS PREBIAS PNP 50V 0.1A EMT3
13 Weeks

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Tech Specifications

Configuration
Single
PPAP
No
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
50 V
Automotive
No
Typical Resistor Ratio
1
Supplier Package
EMT
Transistor Type
PNP - Pre-Biased
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DTA114EETL Description

DTA114EETL Description

The DTA114EETL is a high-performance, single, pre-biased Bipolar Transistor manufactured by ROHM Semiconductor. This PNP transistor is designed for a wide range of applications, offering excellent performance and reliability. With a maximum collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, the DTA114EETL is well-suited for various electronic circuits.

DTA114EETL Features

  • Technical Specifications:

    • Frequency - Transition: 250 MHz
    • Maximum Collector Current (Ic): 100 mA
    • Base Resistor (R1): 10 kOhms
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Voltage - Collector Emitter Breakdown (Max): 50 V
    • Power - Max: 150 mW
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
    • Current - Collector Cutoff (Max): 500nA
  • Performance Benefits:

    • High frequency transition and collector current capabilities
    • Low Vce saturation for efficient power management
    • High DC current gain for reliable signal amplification
  • Unique Features and Advantages:

    • Surface Mount technology for compact and efficient PCB design
    • Active product status, ensuring ongoing availability and support
    • REACH Unaffected and ROHS3 Compliant, meeting environmental and regulatory standards

DTA114EETL Applications

The DTA114EETL is ideal for various applications where high performance, reliability, and compact design are crucial. Some specific use cases include:

  1. Audio Amplifiers: The high-frequency transition and low Vce saturation make it suitable for audio amplification circuits.
  2. Signal Processing: Its high DC current gain and low collector cutoff current make it ideal for signal processing applications.
  3. Power Management: The 50V collector-emitter breakdown voltage and 150mW power rating make it suitable for power management circuits in various electronic devices.

Conclusion of DTA114EETL

The DTA114EETL is a versatile, high-performance PNP Bipolar Transistor that offers excellent technical specifications and performance benefits. Its unique features, such as surface mount technology and compliance with environmental and regulatory standards, make it an ideal choice for a wide range of applications. With its reliable performance and ongoing availability, the DTA114EETL is a valuable component for any electronics engineer's toolkit.

FAQ

Are there related or alternative parts for DTA114EETL?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What is DTA114EETL?
What is the mounting type of DTA114EETL?
What package or case is DTA114EETL available in?
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Availability (In Stock : 6947 )
Quantity Unit Price Ext. Price
20+ $0.03020 $0.60
200+ $0.02372 $4.74
600+ $0.02012 $12.07
3000+ $0.01561 $46.83
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