ROHM Semiconductor_DTA123JUAT106
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ROHM Semiconductor
DTA123JUAT106

292-DTA123JUAT106
PDF Datasheet
TRANS PREBIAS PNP 50V 0.1A UMT3
18 Weeks

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Tech Specifications

Frequency - Transition
250 MHz
Current - Collector (Ic) (Max)
100 mA
Resistor - Base (R1)
2.2 kOhms
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
50 V
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DTA123JUAT106 Description

DTA123JUAT106 Description

The DTA123JUAT106 is a high-performance, single, pre-biased Bipolar Transistor designed and manufactured by ROHM Semiconductor. This PNP transistor is designed for applications requiring a high breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 250 MHz, the DTA123JUAT106 offers excellent high-frequency performance. The device is surface mountable and is available in a UMT3 package, making it suitable for a wide range of applications.

DTA123JUAT106 Features

  • High Breakdown Voltage: The DTA123JUAT106 boasts a high collector-emitter breakdown voltage of 50V, making it suitable for high-voltage applications.
  • High Collector Current: Capable of handling a maximum collector current of 100mA, this transistor can be used in applications requiring high current drive.
  • High Transition Frequency: With a transition frequency of 250 MHz, the DTA123JUAT106 is ideal for high-frequency applications.
  • Low Vce Saturation: The device has a low Vce saturation of 300mV @ 250µA, 5mA, which is beneficial for low-power applications.
  • RoHS Compliance: The DTA123JUAT106 is RoHS3 compliant, making it suitable for environmentally friendly applications.
  • REACH Unaffected: The device is REACH unaffected, ensuring compliance with European Union regulations.
  • Low Moisture Sensitivity: With a moisture sensitivity level of 1 (unlimited), the DTA123JUAT106 is suitable for applications with high humidity or moisture exposure.

DTA123JUAT106 Applications

The DTA123JUAT106 is ideal for a wide range of applications, including:

  1. Audio Amplifiers: Due to its high current drive and low Vce saturation, the DTA123JUAT106 is well-suited for audio amplifier applications.
  2. Switching Regulators: The high breakdown voltage and low Vce saturation make it suitable for switching regulator applications.
  3. RF Amplifiers: The high transition frequency of 250 MHz makes it an excellent choice for RF amplifier applications.
  4. Motor Drivers: The high current drive capability makes it suitable for motor driver applications.
  5. Automotive Applications: The high breakdown voltage and low Vce saturation make it suitable for automotive applications, such as power windows and seat controls.

Conclusion of DTA123JUAT106

The DTA123JUAT106 is a versatile, high-performance Bipolar Transistor that offers a unique combination of high breakdown voltage, high collector current, and low Vce saturation. Its RoHS compliance, REACH unaffected status, and low moisture sensitivity make it an excellent choice for a wide range of applications, including audio amplifiers, switching regulators, RF amplifiers, motor drivers, and automotive applications. With its high transition frequency of 250 MHz, the DTA123JUAT106 is an ideal choice for high-frequency applications, providing excellent performance and reliability.

FAQ

What is DTA123JUAT106?
DTA123JUAT106 is a Single, Pre-Biased Bipolar Transistors from ROHM Semiconductor. This product page provides its main specifications, pricing information, availability, and inquiry options.
What package or case is DTA123JUAT106 available in?
Is DTA123JUAT106 currently in stock?
What voltage specification is listed for DTA123JUAT106?
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