ROHM Semiconductor_DTC123JETL
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ROHM Semiconductor
DTC123JETL

292-DTC123JETL
PDF Datasheet
TRANS PREBIAS NPN 50V 0.1A EMT3
13 Weeks

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Tech Specifications

Configuration
Single
PPAP
No
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
50 V
Automotive
No
Typical Resistor Ratio
0.047
Supplier Package
EMT
Transistor Type
NPN - Pre-Biased
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DTC123JETL Description

DTC123JETL Description

The DTC123JETL is a high-performance, pre-biased NPN bipolar transistor offered by ROHM Semiconductor. It is designed to deliver exceptional performance in a wide range of applications, making it an ideal choice for demanding electronic designs. With a maximum collector-emitter breakdown voltage of 50V, a maximum collector current of 100mA, and a maximum power dissipation of 150mW, the DTC123JETL is well-suited for applications that require high voltage and current handling capabilities.

DTC123JETL Features

  • Technical Specifications:

    • Frequency - Transition: 250 MHz
    • Current - Collector (Ic) (Max): 100 mA
    • Voltage - Collector Emitter Breakdown (Max): 50 V
    • Power - Max: 150 mW
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 2.2 kOhms
    • Resistor - Emitter Base (R2): 47 kOhms
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Performance Benefits:

    • Surface Mount technology for easy integration into modern electronic designs
    • Active product status, ensuring ongoing availability and support
    • REACH Unaffected and RoHS3 Compliant, making it suitable for environmentally conscious applications
  • Unique Features and Advantages:

    • Pre-biased design simplifies circuit design and reduces the need for external biasing components
    • High-frequency capability of 250 MHz makes it suitable for high-speed applications
    • Low saturation voltage of 300mV at 5mA, contributing to high efficiency in switching applications

DTC123JETL Applications

The DTC123JETL is ideal for a variety of applications where high voltage, current handling, and switching speed are required. Some specific use cases include:

  • Automotive Electronics: Power windows, seat controls, and other high-current applications
  • Industrial Controls: Motor drives, relay controls, and high-voltage switching
  • Consumer Electronics: Power supplies, battery management systems, and audio amplifiers
  • Telecommunications: High-speed data transmission and signal processing

Conclusion of DTC123JETL

The DTC123JETL from ROHM Semiconductor is a versatile, high-performance pre-biased NPN bipolar transistor. Its unique combination of technical specifications, performance benefits, and unique features make it an excellent choice for a wide range of applications. With its pre-biased design, high-frequency capability, and low saturation voltage, the DTC123JETL offers a compelling solution for demanding electronic designs.

FAQ

What is DTC123JETL?
DTC123JETL is a Single, Pre-Biased Bipolar Transistors from ROHM Semiconductor. This product page provides its main specifications, pricing information, availability, and inquiry options.
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Availability (In Stock : 437 )
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3000+ $0.01570 $47.10
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