ROHM Semiconductor_DTD143ECT116
original

ROHM Semiconductor
DTD143ECT116

292-DTD143ECT116
PDF Datasheet
TRANS PREBIAS NPN 50V 0.5A SST3
13 Weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Configuration
Single
PPAP
No
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
50 V
Automotive
No
Typical Resistor Ratio
1
Supplier Package
SOT-23
Transistor Type
NPN - Pre-Biased
Show More

DTD143ECT116 Description

DTD143ECT116 Description

The DTD143ECT116 is a high-performance, single pre-biased NPN bipolar transistor offered by ROHM Semiconductor. It is designed for a wide range of applications, including power switching, amplification, and signal processing. With a maximum collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA, the DTD143ECT116 delivers excellent performance in demanding electronic systems.

DTD143ECT116 Features

  • Frequency - Transition: 200 MHz, ensuring fast switching and high-frequency operation.
  • Current - Collector (Ic) (Max): 500 mA, providing ample current handling capability.
  • Resistor - Base (R1): 4.7 kOhms, and Resistor - Emitter Base (R2): 4.7 kOhms, for stable biasing.
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, offering low saturation voltage for efficient operation.
  • Power - Max: 200 mW, suitable for low-power applications.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V, ensuring consistent performance.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), indicating high resistance to moisture-induced degradation.
  • Mounting Type: Surface Mount, facilitating integration into compact designs.
  • Package: Tape & Reel (TR)
  • RoHS Status: ROHS3 Compliant, ensuring environmental responsibility.
  • REACH Status: REACH Unaffected, indicating compliance with European chemical regulations.

DTD143ECT116 Applications

The DTD143ECT116 is ideal for various applications due to its combination of high breakdown voltage, low saturation voltage, and high-frequency capabilities. Some specific use cases include:

  • Power Switching: Its high breakdown voltage and low saturation voltage make it suitable for power switching applications, such as in battery management systems and power supplies.
  • Amplification: The 200 MHz transition frequency and high current gain make it an excellent choice for audio and signal amplification circuits.
  • Signal Processing: Its low noise and high gain characteristics are ideal for use in communication systems and other signal processing applications.

Conclusion of DTD143ECT116

The DTD143ECT116 from ROHM Semiconductor is a versatile, high-performance pre-biased NPN bipolar transistor. Its unique combination of technical specifications, such as high breakdown voltage, low saturation voltage, and high-frequency operation, make it an excellent choice for a wide range of applications. With its RoHS compliance and REACH unaffected status, the DTD143ECT116 is not only a high-performing component but also an environmentally responsible choice.

FAQ

What is the mounting type of DTD143ECT116?
DTD143ECT116 uses a Surface Mount mounting style based on the listed product specifications.
What is the standard lead time for DTD143ECT116?
What package or case is DTD143ECT116 available in?
Are there related or alternative parts for DTD143ECT116?
What is DTD143ECT116?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ