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EMH2T2R

EMH2T2R Description

The EMH2T2R is a Bipolar Transistor Array from ROHM Semiconductor, designed for pre-biased applications. This 2NPN pre-biased transistor offers a frequency transition of 250MHz, making it suitable for high-speed switching and amplification tasks. With a maximum collector current (Ic) of 100mA and a collector-emitter breakdown voltage of 50V, the EMH2T2R provides reliable performance in various electronic systems.

EMH2T2R Features

• Technical Specifications:

  • Frequency - Transition: 250MHz
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA

• Performance Benefits:

  • High frequency transition for fast switching and amplification
  • Robust collector-emitter breakdown voltage for reliable operation
  • Low saturation voltage for efficient power management

• Unique Advantages:

  • Pre-biased design simplifies circuit design and reduces external components
  • Surface mount packaging for compact and efficient PCB layout
  • RoHS3 compliant and REACH unaffected, ensuring environmental sustainability

EMH2T2R Applications

The EMH2T2R is ideal for various applications where high-speed switching and amplification are required. Some specific use cases include:

1. Audio Amplifiers: Utilize the high-frequency transition and low saturation voltage for efficient audio signal amplification.
2. RF Switches: Leverage the 250MHz frequency transition for high-speed RF switching applications.
3. Automotive Electronics: Employ the robust collector-emitter breakdown voltage for reliable operation in automotive electronics.
4. Industrial Control Systems: Benefit from the pre-biased design and surface mount packaging for compact and efficient control systems.

Conclusion of EMH2T2R

The EMH2T2R from ROHM Semiconductor is a versatile Bipolar Transistor Array designed for pre-biased applications. Its high-frequency transition, robust collector-emitter breakdown voltage, and pre-biased design make it an ideal choice for high-speed switching and amplification tasks. With its unique advantages and wide range of applications, the EMH2T2R is a reliable and efficient solution for various electronic systems.