ROHM Semiconductor_EMH9T2R
original

ROHM Semiconductor
EMH9T2R

293-EMH9T2R
PDF Datasheet
TRANS 2NPN PREBIAS 0.15W EMT6
20 Weeks

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Tech Specifications

Frequency - Transition
250MHz
Current - Collector (Ic) (Max)
100mA
Resistor - Base (R1)
10kOhms
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
50V
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EMH9T2R Description

EMH9T2R Description

The EMH9T2R is a Bipolar Transistor Array from ROHM Semiconductor, specifically designed for pre-biased applications. This 2NPN transistor is housed in an EMT6 package, making it suitable for surface mount applications. With a maximum collector-emitter breakdown voltage of 50V, it can handle a wide range of power requirements. The EMH9T2R is designed to operate at a frequency of 250MHz, making it ideal for high-speed applications. It also features a maximum collector current of 100mA and a maximum power dissipation of 150mW.

EMH9T2R Features

  • High Frequency Operation: With a frequency transition of 250MHz, the EMH9T2R is suitable for high-speed applications.
  • Low Power Consumption: The EMH9T2R has a maximum power dissipation of 150mW, making it energy-efficient.
  • Robust Voltage and Current Ratings: The transistor can handle a maximum collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA.
  • Pre-Biased Design: The EMH9T2R is pre-biased, simplifying the design process and reducing the need for external biasing components.
  • Surface Mount Package: The EMT6 package allows for surface mount applications, reducing space requirements and improving manufacturing efficiency.
  • Compliance with Regulations: The EMH9T2R is compliant with RoHS3 and REACH regulations, ensuring environmental and safety standards are met.

EMH9T2R Applications

The EMH9T2R is ideal for a variety of applications due to its high-frequency operation, low power consumption, and robust voltage and current ratings. Some specific use cases include:

  1. Audio Amplifiers: The pre-biased design and high-frequency operation make the EMH9T2R suitable for audio amplifiers, where low distortion and high fidelity are required.
  2. RF Applications: The 250MHz frequency transition allows the EMH9T2R to be used in RF applications, such as wireless communication systems and radar systems.
  3. Power Management: The EMH9T2R can be used in power management circuits, where low power consumption and high efficiency are critical.
  4. Automotive Electronics: The robust voltage and current ratings make the EMH9T2R suitable for automotive electronics, where reliability and durability are essential.

Conclusion of EMH9T2R

The EMH9T2R from ROHM Semiconductor is a versatile Bipolar Transistor Array that offers high-frequency operation, low power consumption, and robust voltage and current ratings. Its pre-biased design simplifies the design process, while its surface mount package allows for space-efficient applications. With compliance to RoHS3 and REACH regulations, the EMH9T2R is an excellent choice for a wide range of applications, including audio amplifiers, RF applications, power management, and automotive electronics.

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