ROHM Semiconductor_IMN10T108
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ROHM Semiconductor
IMN10T108

286-IMN10T108
PDF Datasheet
DIODE ARRAY GP 80V 100MA SMT6
12 Weeks

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Tech Specifications

Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
4 ns
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Active
Supplier Device Package
SMT6
Current - Reverse Leakage @ Vr
100 nA @ 70 V
Series
IMN10
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IMN10T108 Description

IMN10T108 Description

The IMN10T108 is a high-performance diode array from ROHM Semiconductor, designed for applications requiring efficient and reliable power management. With its 3 independent diode configuration, the IMN10T108 offers versatility and flexibility in various electronic systems. This surface-mount device is built using standard technology, ensuring optimal performance and reliability in a wide range of operating conditions.

IMN10T108 Features

  • Speed: The IMN10T108 is designed for small signal applications with a maximum current of 200mA (Io), making it suitable for high-speed switching applications.
  • Reverse Recovery Time (trr): With a fast 4 ns reverse recovery time, the IMN10T108 minimizes switching losses and improves overall system efficiency.
  • Voltage - Forward (Vf) (Max) @ If: The device has a low forward voltage drop of 1.2 V at 100 mA, which helps reduce power dissipation and improve efficiency.
  • Voltage - DC Reverse (Vr) (Max): The IMN10T108 can handle reverse voltages up to 80 V, making it suitable for applications with high voltage requirements.
  • Current - Average Rectified (Io) (per Diode): Each diode in the array can handle an average rectified current of 100mA, ensuring reliable performance in various power management applications.
  • Operating Temperature - Junction: The device can operate at junction temperatures up to 150°C, making it suitable for high-temperature environments.
  • RoHS Status: The IMN10T108 is compliant with ROHS3 regulations, ensuring environmental compliance and reducing the environmental impact of electronic devices.
  • Moisture Sensitivity Level (MSL): With an MSL of 1 (Unlimited), the IMN10T108 can be stored and handled without special precautions, simplifying logistics and inventory management.

IMN10T108 Applications

The IMN10T108 is ideal for a wide range of applications, including:

  1. Power Supplies: The device's low forward voltage drop and high reverse voltage capability make it suitable for use in power supply circuits, where efficiency and reliability are critical.
  2. Automotive Electronics: The high operating temperature and robust performance of the IMN10T108 make it an excellent choice for automotive applications, where reliability and durability are essential.
  3. Industrial Control Systems: The fast reverse recovery time and high reverse voltage capability of the IMN10T108 make it suitable for use in industrial control systems, where high-speed switching and high voltage requirements are common.

Conclusion of IMN10T108

The IMN10T108 from ROHM Semiconductor is a versatile and reliable diode array, offering a combination of high performance, low power dissipation, and robustness. Its unique features, such as the fast reverse recovery time and high reverse voltage capability, make it an ideal choice for a wide range of applications, including power supplies, automotive electronics, and industrial control systems. With its RoHS compliance and moisture sensitivity level of 1, the IMN10T108 is not only a high-performance solution but also an environmentally friendly option for electronic design engineers.

FAQ

What voltage specification is listed for IMN10T108?
The listed voltage-related specification for IMN10T108 is 1.2 V @ 100 mA.
What is IMN10T108?
What operating temperature range does IMN10T108 support?
What package or case is IMN10T108 available in?
Does IMN10T108 have quantity-based pricing?
Availability (In Stock : 3983 )
Quantity Unit Price Ext. Price
5+ $0.19243 $0.96
50+ $0.15517 $7.76
150+ $0.13921 $20.88
500+ $0.11929 $59.64
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