ROHM Semiconductor_IMT1AT110
original

ROHM Semiconductor
IMT1AT110

277-IMT1AT110
PDF Datasheet
TRANS 2PNP 50V 0.15A 6SMT
13 Weeks

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Tech Specifications

Operating Temperature
150°C (TJ)
Frequency - Transition
140MHz
Current - Collector (Ic) (Max)
150mA
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
50V
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IMT1AT110 Description

IMT1AT110 Description

The IMT1AT110 is a high-performance Bipolar Transistor Array from ROHM Semiconductor. This 2 PNP dual transistor is designed for a wide range of applications, offering excellent performance in terms of power handling, operating temperature, and frequency. With a maximum collector-emitter breakdown voltage of 50V and a maximum collector current of 150mA, the IMT1AT110 is well-suited for demanding electronic circuits.

IMT1AT110 Features

  • Operating Temperature: The IMT1AT110 can operate at a maximum junction temperature of 150°C, making it suitable for high-temperature environments.
  • Frequency - Transition: With a transition frequency of 140MHz, the IMT1AT110 offers excellent high-frequency performance.
  • Current - Collector (Ic) (Max): The maximum collector current is 150mA, providing ample current handling capability.
  • Vce Saturation (Max) @ Ib, Ic: The maximum Vce saturation voltage is 500mV at 5mA and 50mA collector current, ensuring low power dissipation.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: The minimum DC current gain is 120 at 1mA collector current and 6V collector-emitter voltage, providing consistent performance.
  • Power - Max: The maximum power dissipation is 300mW, allowing for efficient operation in various applications.
  • Mounting Type: The IMT1AT110 is surface mount, facilitating easy integration into modern electronic devices.
  • RoHS Status: The device is ROHS3 compliant, ensuring environmental responsibility.

IMT1AT110 Applications

The IMT1AT110 is ideal for a variety of applications, including:

  • Audio Amplifiers: The high-frequency performance and low power dissipation make it suitable for audio amplifier circuits.
  • Switching Applications: The high current handling capability and low saturation voltage make it ideal for switching applications.
  • Automotive Electronics: The high operating temperature and robust performance make it suitable for automotive electronics, where reliability is crucial.
  • Industrial Control Systems: The wide operating temperature range and high power handling make it ideal for industrial control systems.

Conclusion of IMT1AT110

The IMT1AT110 from ROHM Semiconductor is a versatile Bipolar Transistor Array that offers excellent performance in terms of power handling, operating temperature, and frequency. Its unique features, such as high current gain and low saturation voltage, make it an ideal choice for a wide range of applications, including audio amplifiers, switching applications, automotive electronics, and industrial control systems. With its surface mount design and RoHS compliance, the IMT1AT110 is a reliable and environmentally responsible choice for your next electronic design.

FAQ

What voltage specification is listed for IMT1AT110?
The listed voltage-related specification for IMT1AT110 is 50V.
Does IMT1AT110 have quantity-based pricing?
Is IMT1AT110 currently in stock?
What operating temperature range does IMT1AT110 support?
What is the mounting type of IMT1AT110?
Availability (In Stock : 13093 )
Quantity Unit Price Ext. Price
10+ $0.04344 $0.43
100+ $0.03439 $3.44
300+ $0.02987 $8.96
3000+ $0.02647 $79.41
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