ROHM Semiconductor_IMX8T108
original

ROHM Semiconductor
IMX8T108

277-IMX8T108
PDF Datasheet
TRANS 2NPN 120V 0.05A 6SMT
18 Weeks

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Tech Specifications

Operating Temperature
150°C (TJ)
Frequency - Transition
140MHz
Current - Collector (Ic) (Max)
50mA
Vce Saturation (Max) @ Ib, Ic
500mV @ 1mA, 10mA
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Not For New Designs
Voltage - Collector Emitter Breakdown (Max)
120V
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IMX8T108 Description

IMX8T108 Description

The IMX8T108 is a high-performance dual NPN bipolar transistor array from ROHM Semiconductor, designed for a wide range of applications in the electronics industry. With its advanced features and superior performance, this device stands out as an ideal choice for various applications. The IMX8T108 boasts an operating temperature range of 150°C (TJ), making it suitable for high-temperature environments. It also offers a frequency transition of 140MHz, ensuring fast switching capabilities and high-speed performance.

IMX8T108 Features

  • Operating Temperature: The IMX8T108 can operate at temperatures up to 150°C (TJ), making it suitable for high-temperature applications.
  • Frequency - Transition: With a frequency transition of 140MHz, the IMX8T108 offers fast switching capabilities and high-speed performance.
  • Current - Collector (Ic) (Max): The device can handle a maximum collector current of 50mA, ensuring efficient power handling.
  • Vce Saturation (Max) @ Ib, Ic: The IMX8T108 has a low saturation voltage of 500mV @ 1mA, 10mA, which contributes to its high efficiency.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: The device offers a minimum current gain of 180 @ 2mA, 6V, ensuring consistent performance.
  • Power - Max: The IMX8T108 can handle a maximum power dissipation of 300mW, making it suitable for various power applications.
  • Voltage - Collector Emitter Breakdown (Max): The device can withstand a maximum collector-emitter breakdown voltage of 120V, ensuring reliable operation in high-voltage environments.

IMX8T108 Applications

The IMX8T108 is an ideal choice for various applications, including:

  1. Audio Amplifiers: The device's high current gain and low saturation voltage make it suitable for audio amplifiers, ensuring high-quality audio performance.
  2. Switching Regulators: The IMX8T108's fast switching capabilities and high-speed performance make it an excellent choice for switching regulators in power management applications.
  3. RF Amplifiers: The device's high frequency transition and low noise characteristics make it suitable for RF amplifiers in communication systems.
  4. Motor Control: The IMX8T108's high power handling and high-temperature operation make it ideal for motor control applications in industrial and automotive systems.

Conclusion of IMX8T108

The IMX8T108 from ROHM Semiconductor is a versatile and high-performance dual NPN bipolar transistor array that offers a unique combination of features and benefits. Its high operating temperature, fast switching capabilities, and superior performance make it an ideal choice for a wide range of applications in the electronics industry. With its advanced features and reliable performance, the IMX8T108 stands out as a top choice for demanding applications where performance and reliability are critical.

FAQ

What voltage specification is listed for IMX8T108?
The listed voltage-related specification for IMX8T108 is 120V.
What package or case is IMX8T108 available in?
Does IMX8T108 have quantity-based pricing?
What is the mounting type of IMX8T108?
Is IMX8T108 currently in stock?
Availability (In Stock : 8936 )
Quantity Unit Price Ext. Price
5+ $0.09067 $0.45
50+ $0.07255 $3.63
150+ $0.06349 $9.52
500+ $0.05669 $28.34
3000+ $0.05125 $153.75
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