ROHM Semiconductor_MSM51V18160F-60T3-K7

ROHM Semiconductor
MSM51V18160F-60T3-K7  
Memory ICs Products

ROHM Semiconductor
MSM51V18160F-60T3-K7
774-MSM51V18160F-60T3-K7
IC DRAM 16M PARALLEL 50TSOP
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MSM51V18160F-60T3-K7 Description

MSM51V18160F-60T3-K7 Description

The MSM51V18160F-60T3-K7 is a high-performance DRAM (Dynamic Random Access Memory) IC manufactured by ROHM Semiconductor. This 16M parallel DRAM is designed to offer robust memory solutions for a variety of electronic applications. The device is housed in a 50TSOP package, which is known for its compact size and efficient thermal performance. Despite being marked as obsolete, the MSM51V18160F-60T3-K7 remains a reliable choice for legacy systems and specific applications where its unique features are still highly valued.

MSM51V18160F-60T3-K7 Features

  • Memory Capacity: The MSM51V18160F-60T3-K7 features a 16M memory capacity, providing ample storage for data-intensive applications.
  • Parallel Interface: The parallel interface ensures high-speed data transfer, making it suitable for systems requiring rapid data processing.
  • 50TSOP Package: The 50TSOP package offers a balance between compactness and thermal efficiency, ideal for space-constrained designs.
  • Moisture Sensitivity Level (MSL): With an MSL of 2 (1 Year), the device is well-suited for environments with varying humidity levels, ensuring long-term reliability.
  • ECCN and HTSUS: The MSM51V18160F-60T3-K7 is classified under ECCN EAR99 and HTSUS 8542.32.0002, facilitating compliance with international trade regulations.
  • DigiKey Programmable: While the programmability status is not verified, the device retains the potential for customization, offering flexibility in certain applications.

MSM51V18160F-60T3-K7 Applications

The MSM51V18160F-60T3-K7 is ideal for a range of applications where reliable and efficient memory solutions are required. Some specific use cases include:

  • Industrial Control Systems: The robustness and high memory capacity make it suitable for industrial applications that require extensive data storage and processing.
  • Telecommunications: In communication systems, the MSM51V18160F-60T3-K7 can be used for buffering and temporary data storage, ensuring smooth operation.
  • Consumer Electronics: Legacy consumer devices that rely on DRAM for temporary storage can benefit from the MSM51V18160F-60T3-K7's performance and reliability.
  • Automotive Systems: The device's moisture sensitivity level and compact packaging make it suitable for automotive applications where environmental conditions can vary significantly.

Conclusion of MSM51V18160F-60T3-K7

The MSM51V18160F-60T3-K7, despite being marked as obsolete, remains a valuable component in the electronics industry. Its high memory capacity, efficient parallel interface, and reliable packaging make it an excellent choice for applications requiring robust memory solutions. The device's compliance with international trade regulations and its potential for customization further enhance its appeal. For systems where legacy compatibility and specific performance characteristics are crucial, the MSM51V18160F-60T3-K7 stands out as a reliable and efficient memory IC.

Tech Specifications

Series
Mfr
ECCN
HTSUS
Package
Product Status
Moisture Sensitivity Level (MSL)

MSM51V18160F-60T3-K7 Documents

Download datasheets and manufacturer documentation for MSM51V18160F-60T3-K7

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