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QH8MA3TCR

QH8MA3TCR Description

The QH8MA3TCR is a high-performance MOSFET (Metal Oxide) device manufactured by ROHM Semiconductor. It belongs to the category of FET, MOSFET Arrays. This device is designed for applications that require high power handling and efficient switching capabilities. The QH8MA3TCR is an N/P-CH MOSFET with a drain-to-source voltage (Vdss) of 30V, making it suitable for high-voltage applications. It also features a continuous drain current (Id) of 7A at 25°C and 5.5A at a higher temperature, ensuring reliable performance in demanding conditions.

QH8MA3TCR Features

• Operating Temperature: The QH8MA3TCR can operate at a junction temperature (TJ) of up to 150°C, making it suitable for applications with high thermal requirements.
• Input Capacitance (Ciss): The maximum input capacitance is 300pF at a drain-source voltage (Vds) of 15V, ensuring fast switching speeds and low power consumption.
• Gate Charge (Qg): The maximum gate charge is 7.2nC at a gate-source voltage (Vgs) of 10V, contributing to the device's high efficiency and low power loss.
• Rds On (Max): The maximum on-resistance (Rds(on)) is 29mOhm at a drain current (Id) of 7A and a gate-source voltage (Vgs) of 10V, providing low conduction losses.
• Vgs(th) (Max): The maximum threshold voltage (Vgs(th)) is 2.5V at a drain current (Id) of 1mA, ensuring reliable operation and easy control.
• Mounting Type: The QH8MA3TCR is designed for surface mount applications, providing a compact and efficient solution for space-constrained designs.
• Power - Max: The maximum power dissipation is 1.5W, allowing the device to handle high power applications without overheating.
• Moisture Sensitivity Level (MSL): The QH8MA3TCR has an MSL of 1, indicating that it is not sensitive to moisture and can be stored and handled without special precautions.

QH8MA3TCR Applications

The QH8MA3TCR is ideal for a wide range of applications due to its high power handling, efficient switching, and compact form factor. Some specific use cases include:

1. Power Supplies: The high drain current and low on-resistance make the QH8MA3TCR suitable for power supply applications, where efficient power conversion and low power loss are critical.
2. Motor Control: The QH8MA3TCR's high voltage and current ratings make it an excellent choice for motor control applications, where high power handling and efficient switching are required.
3. Automotive Applications: The device's high operating temperature and robust performance make it suitable for automotive applications, where reliability and performance under harsh conditions are essential.

Conclusion of QH8MA3TCR

The QH8MA3TCR from ROHM Semiconductor is a high-performance MOSFET device that offers excellent power handling, efficient switching, and a compact form factor. Its unique features, such as low on-resistance, high input capacitance, and high operating temperature, make it an ideal choice for a wide range of applications, including power supplies, motor control, and automotive systems. With its robust performance and reliable operation, the QH8MA3TCR is a valuable addition to any high-power, high-efficiency design.