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R6009ENX

R6009ENX Description

The R6009ENX is a high-performance MOSFET N-CH 600V 9A TO220FM from ROHM Semiconductor, designed for applications requiring high efficiency and reliability. This device features a maximum drain-source voltage of 600V, continuous drain current of 9A at 25°C, and a maximum power dissipation of 40W at case temperature. With a low Rds(on) of 535mOhm at 2.8A and 10V, the R6009ENX offers high efficiency and low power loss in switching applications.

R6009ENX Features

• Maximum drain-source voltage (Vdss) of 600V
• Continuous drain current (Id) of 9A at 25°C
• Maximum power dissipation of 40W at case temperature
• Low Rds(on) of 535mOhm at 2.8A and 10V
• Maximum gate-source voltage (Vgs) of ±20V
• Maximum gate threshold voltage (Vgs(th)) of 4V at 1mA
• Maximum gate charge (Qg) of 23nC at 10V
• Maximum input capacitance (Ciss) of 430pF at 25V
• Through-hole mounting type in TO220FM package
• Active product status with REACH unaffected and RoHS3 compliant
• Moisture sensitivity level (MSL) of 1 (unlimited)

R6009ENX Applications

The R6009ENX is ideal for a wide range of applications, including:

1. Power supply circuits
2. Motor control and drive systems
3. Industrial automation and control
4. Renewable energy systems, such as solar inverters and wind power converters
5. Electric vehicle (EV) charging systems
6. High-efficiency lighting systems, including LED drivers

Conclusion of R6009ENX

The R6009ENX from ROHM Semiconductor is a high-performance, reliable MOSFET designed for demanding applications requiring high efficiency and low power loss. Its unique features, such as low Rds(on), high Vdss, and compliance with industry standards, make it an excellent choice for power supply, motor control, and renewable energy systems. With its robust performance and wide range of applications, the R6009ENX is a valuable addition to any electronics design engineer's toolkit.