ROHM Semiconductor_R6030ENZ4C13
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ROHM Semiconductor
R6030ENZ4C13

278-R6030ENZ4C13
PDF Datasheet
MOSFET N-CH 600V 30A TO247
18 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
85 nC @ 10 V
Product Status
Active
Supplier Device Package
TO-247
Drain to Source Voltage (Vdss)
600 V
Power Dissipation (Max)
305W (Tc)
Package / Case
TO-247-3
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R6030ENZ4C13 Description

R6030ENZ4C13 Description

The R6030ENZ4C13 from ROHM Semiconductor is a high-performance N-channel MOSFET designed for demanding power electronics applications. With a 600V drain-to-source voltage (Vdss) and 30A continuous drain current (Id), this device delivers robust switching performance in high-voltage circuits. Its low on-resistance (Rds(on)) of 130mΩ at 10V Vgs ensures minimal conduction losses, while the 305W maximum power dissipation (Tc) enables efficient thermal management in high-power designs. Packaged in a TO-247 through-hole format, it is optimized for reliability in industrial and automotive environments.

R6030ENZ4C13 Features

  • High Voltage & Current Rating: 600V Vdss and 30A Id for robust power handling.
  • Low Gate Charge (Qg): 85nC at 10V reduces switching losses, improving efficiency in high-frequency applications.
  • Low Input Capacitance (Ciss): 2100pF at 25V minimizes drive requirements.
  • Wide Vgs Range: ±20V gate tolerance enhances flexibility in drive circuit design.
  • High-Temperature Operation: Rated for 150°C junction temperature (TJ), suitable for harsh environments.
  • Compliance: ROHS3, REACH Unaffected, and ECCN EAR99 certified for global use.

R6030ENZ4C13 Applications

  • Switched-Mode Power Supplies (SMPS): High efficiency and low losses make it ideal for PFC and DC-DC converters.
  • Motor Drives: Robust 600V rating suits industrial motor control and inverter systems.
  • Renewable Energy: Solar inverters and battery management systems benefit from its high-voltage capability.
  • Automotive Systems: Suitable for electric vehicle (EV) charging and traction control due to its high-temperature tolerance.
  • Industrial Automation: Reliable performance in high-power switching applications like welding equipment.

Conclusion of R6030ENZ4C13

The R6030ENZ4C13 stands out as a high-efficiency, high-reliability MOSFET for 600V power systems. Its low Rds(on), optimized gate charge, and thermal performance make it superior to comparable models in reducing energy losses and improving system longevity. Whether in industrial, automotive, or renewable energy applications, this device offers a balance of power density, efficiency, and ruggedness, backed by ROHM’s quality assurance.

FAQ

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Yes. R6030ENZ4C13 currently shows 200 unit(s) in stock.
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