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R6030KNX

R6030KNX Description

The R6030KNX from ROHM Semiconductor is a high-performance N-channel MOSFET designed for demanding power electronics applications. With a 600V drain-to-source voltage (Vdss) and 30A continuous drain current (Id), this device delivers robust switching performance in high-voltage circuits. Its low on-resistance (Rds(on)) of 130mΩ at 10V Vgs ensures minimal conduction losses, enhancing efficiency in power conversion systems. The TO-220FM package provides excellent thermal dissipation, supporting a maximum power dissipation of 86W (Tc).

R6030KNX Features

• High Voltage & Current Handling: 600V Vdss and 30A Id make it suitable for industrial and automotive applications.
• Low Gate Charge (Qg): 56nC at 10V reduces switching losses, improving efficiency in high-frequency circuits.
• Optimized Drive Voltage: 10V drive voltage ensures reliable switching with minimal gate drive requirements.
• Robust Thermal Performance: TO-220FM package with 86W power dissipation enables stable operation under high loads.
• Wide Vgs Range: ±20V maximum gate-source voltage enhances flexibility in drive circuit design.
• Compliance & Reliability: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited) for environmental and handling safety.

R6030KNX Applications

• Switched-Mode Power Supplies (SMPS): Efficient power conversion in AC/DC and DC/DC converters.
• Motor Drives & Inverters: High-current handling for industrial motor control and renewable energy systems.
• Automotive Systems: Suitable for electric vehicle (EV) charging and power distribution modules.
• Industrial Power Modules: Reliable performance in high-voltage switching applications like UPS and welding equipment.

Conclusion of R6030KNX

The R6030KNX stands out as a high-efficiency, high-reliability MOSFET for 600V power systems, combining low Rds(on), fast switching, and robust thermal management. Its TO-220FM package and compliance with industry standards make it ideal for industrial, automotive, and renewable energy applications where performance and durability are critical. Engineers can leverage its optimized gate charge and drive voltage to design compact, energy-efficient power solutions.