ROHM Semiconductor_R6042JNZ4C13
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ROHM Semiconductor
R6042JNZ4C13

278-R6042JNZ4C13
PDF Datasheet
MOSFET N-CH 600V 42A TO247G
18 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
3500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 15 V
Product Status
Active
Supplier Device Package
TO-247G
Drain to Source Voltage (Vdss)
600 V
Power Dissipation (Max)
495W (Tc)
Package / Case
TO-247-3
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R6042JNZ4C13 Description

R6042JNZ4C13 Description

The R6042JNZ4C13 from ROHM Semiconductor is a high-performance N-channel MOSFET designed for demanding power electronics applications. With a 600V drain-to-source voltage (Vdss) and 42A continuous drain current (Id), this device delivers robust switching performance in high-voltage circuits. Its low on-resistance (Rds(on)) of 104mΩ at 15V gate drive ensures minimal conduction losses, while the 3500pF input capacitance (Ciss) and 100nC total gate charge (Qg) enable efficient high-frequency operation. Packaged in a TO-247G through-hole format, it offers excellent thermal dissipation (up to 495W at Tc) and reliability for industrial environments.

R6042JNZ4C13 Features

  • High Voltage & Current Handling: 600V Vdss and 42A Id (Tc) for robust power switching.
  • Low Conduction Losses: 104mΩ Rds(on) at 15V Vgs minimizes heat generation.
  • Optimized Switching Performance: Balanced Ciss (3500pF) and Qg (100nC) for efficient high-frequency operation.
  • Wide Gate-Source Voltage Range: Supports ±30V Vgs, enhancing flexibility in drive circuits.
  • Thermal Efficiency: TO-247G package with 495W power dissipation (Tc) for superior heat management.
  • Reliability Compliance: ROHS3, REACH Unaffected, and MSL 1 (Unlimited) for environmental and handling robustness.

R6042JNZ4C13 Applications

This MOSFET is ideal for:

  • Switched-Mode Power Supplies (SMPS): High-voltage DC-DC converters and PFC stages.
  • Motor Drives & Inverters: Efficient control in industrial and automotive systems.
  • Renewable Energy Systems: Solar inverters and wind power converters requiring high breakdown voltage.
  • Industrial Automation: High-current switching in PLCs and robotic controls.
  • UPS & Energy Storage: Reliable performance in backup power systems.

Conclusion of R6042JNZ4C13

The R6042JNZ4C13 stands out as a high-efficiency, high-voltage MOSFET tailored for power-intensive applications. Its combination of low Rds(on), optimized gate charge, and robust thermal performance makes it a superior choice over comparable models in industrial and renewable energy systems. ROHM's stringent quality standards ensure long-term reliability, making this device a trusted solution for engineers designing next-generation power electronics.

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