ROHM Semiconductor_R6076ENZ4C13
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ROHM Semiconductor
R6076ENZ4C13

278-R6076ENZ4C13
PDF Datasheet
MOSFET N-CH 600V 76A TO247
18 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
6500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
260 nC @ 10 V
Product Status
Active
Supplier Device Package
TO-247
Drain to Source Voltage (Vdss)
600 V
Power Dissipation (Max)
735W (Tc)
Package / Case
TO-247-3
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R6076ENZ4C13 Description

R6076ENZ4C13 Description

The R6076ENZ4C13 from ROHM Semiconductor is a high-performance N-channel MOSFET designed for demanding power electronics applications. With a 600V drain-to-source voltage (Vdss) and 76A continuous drain current (Id), this device delivers robust power handling in a TO-247 package. It features a low on-resistance (Rds(on)) of 42mΩ at 10V gate drive, ensuring efficient power conversion with minimal losses. The MOSFET operates reliably up to 150°C junction temperature (TJ) and is ROHS3 compliant, meeting stringent environmental standards. Its ±20V maximum gate-source voltage (Vgs) and 4V threshold voltage (Vgs(th)) provide flexibility in drive circuit design.

R6076ENZ4C13 Features

  • High Voltage & Current Rating: 600V Vdss and 76A Id (Tc) for robust power switching.
  • Low Rds(on): 42mΩ @ 10V, reducing conduction losses and improving efficiency.
  • Fast Switching: Optimized gate charge (Qg: 260nC @ 10V) and input capacitance (Ciss: 6500pF @ 25V) for high-frequency operation.
  • Thermal Performance: 735W max power dissipation (Tc) and 150°C TJ ensure reliability in harsh environments.
  • Wide Gate Drive Range: ±20V Vgs(max) accommodates diverse driving conditions.
  • Industry-Standard Package: TO-247 through-hole mounting for easy integration and heat dissipation.
  • Compliance: ROHS3, REACH unaffected, and ECCN EAR99 for global compatibility.

R6076ENZ4C13 Applications

This MOSFET is ideal for:

  • Switched-Mode Power Supplies (SMPS): High-voltage DC-DC converters and PFC stages.
  • Motor Drives: Inverters for industrial and automotive applications requiring high current handling.
  • Renewable Energy Systems: Solar inverters and wind turbine converters.
  • Industrial Automation: High-power switching in PLCs and robotic systems.
  • Electric Vehicle (EV) Chargers: Efficient power management in fast-charging infrastructure.

Conclusion of R6076ENZ4C13

The R6076ENZ4C13 stands out as a high-efficiency, high-reliability MOSFET for power electronics. Its combination of low Rds(on), high voltage/current ratings, and thermal robustness makes it superior to competing models in energy-critical applications. Whether in industrial, automotive, or renewable energy systems, this device ensures optimal performance, reduced losses, and long-term durability. Its compliance with global standards further enhances its suitability for modern, eco-conscious designs.

FAQ

What is the standard lead time for R6076ENZ4C13?
The standard lead time for R6076ENZ4C13 is 18 Weeks.
What operating temperature range does R6076ENZ4C13 support?
What voltage specification is listed for R6076ENZ4C13?
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