ROHM Semiconductor_RF081M2STR
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ROHM Semiconductor
RF081M2STR

280-RF081M2STR
PDF Datasheet
DIODE GEN PURP 200V 800MA PMDU
17 Weeks

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ISO9001
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ISO45001
ISO14001
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Tech Specifications

Speed
Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr F
-
Reverse Recovery Time(trr)
25 ns
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Active
Supplier Device Package
PMDU
Current - Reverse Leakage @ Vr
10 µA @ 200 V
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RF081M2STR Description

RF081M2STR Description

The RF081M2STR is a high-performance single diode from ROHM Semiconductor, designed for a wide range of applications requiring fast recovery and high current handling capabilities. With a maximum forward voltage of 950 mV at 800 mA and a reverse voltage rating of 200 V, this diode offers excellent electrical performance and reliability. The RF081M2STR features a fast recovery time of 25 ns, enabling efficient operation in high-speed switching applications. The device is manufactured using standard technology and is available in a surface-mount package, making it suitable for use in compact electronic designs.

RF081M2STR Features

  • Fast Recovery: The RF081M2STR boasts a fast recovery time of 25 ns, ensuring efficient operation in high-speed switching applications.
  • High Current Handling: With an average rectified current of 800 mA, this diode can handle significant current loads, making it ideal for power electronics applications.
  • Low Forward Voltage: The maximum forward voltage of 950 mV at 800 mA contributes to low power dissipation and improved efficiency.
  • High Reverse Voltage Rating: The 200 V reverse voltage rating allows the RF081M2STR to be used in applications with high voltage requirements.
  • Surface Mount Package: The surface-mount package enables compact and efficient integration into electronic designs.
  • RoHS3 Compliant: The RF081M2STR is compliant with the RoHS3 directive, making it suitable for use in environmentally conscious applications.

RF081M2STR Applications

The RF081M2STR is ideal for a variety of applications, including:

  1. Power Electronics: Due to its high current handling capabilities and low forward voltage, this diode is well-suited for use in power electronics applications, such as power supplies and converters.
  2. Motor Control: The fast recovery time and high reverse voltage rating make the RF081M2STR an excellent choice for motor control applications, where high-speed switching and voltage protection are required.
  3. Automotive Electronics: The RF081M2STR's robust performance and reliability make it suitable for use in automotive electronics, such as alternators and power management systems.
  4. Renewable Energy Systems: This diode can be used in renewable energy systems, such as solar panels and wind turbines, where high voltage and current handling capabilities are essential.

Conclusion of RF081M2STR

The RF081M2STR from ROHM Semiconductor is a versatile and high-performance single diode, offering a combination of fast recovery, high current handling, and low forward voltage. Its surface-mount package and RoHS3 compliance make it an ideal choice for a wide range of applications, including power electronics, motor control, automotive electronics, and renewable energy systems. With its unique features and advantages over similar models, the RF081M2STR is a reliable and efficient solution for demanding electronic designs.

FAQ

What is RF081M2STR?
RF081M2STR is a Single Diodes from ROHM Semiconductor. This product page provides its main specifications, pricing information, availability, and inquiry options.
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