ROHM Semiconductor_RFN1LAM6STR
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ROHM Semiconductor
RFN1LAM6STR

280-RFN1LAM6STR
PDF Datasheet
DIODE GEN PURP 600V 800MA PMDTM
20 Weeks

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ISO9001
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ISO45001
ISO14001
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Tech Specifications

Speed
Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr F
-
Reverse Recovery Time(trr)
35 ns
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Active
Supplier Device Package
PMDTM
Current - Reverse Leakage @ Vr
1 µA @ 600 V
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RFN1LAM6STR Description

RFN1LAM6STR Description

The RFN1LAM6STR is a high-performance, general-purpose diode from ROHM Semiconductor, designed for applications requiring fast recovery and high current handling capabilities. With a maximum forward voltage of 1.45V at 800mA and a reverse leakage current of just 1µA at 600V, this diode offers excellent electrical performance and efficiency. Its fast recovery time of 35ns and high average rectified current of 800mA make it ideal for use in various power electronics applications.

RFN1LAM6STR Features

  • Fast Recovery Time: The RFN1LAM6STR boasts a fast recovery time of 35ns, ensuring minimal power loss and improved efficiency in switching applications.
  • High Current Handling: Capable of handling an average rectified current of 800mA, this diode is suitable for applications requiring high current flow.
  • Low Reverse Leakage Current: With a reverse leakage current of just 1µA at 600V, the RFN1LAM6STR offers excellent electrical performance and efficiency.
  • High Voltage Rating: Designed to withstand a maximum DC reverse voltage of 600V, this diode is suitable for high-voltage applications.
  • Surface Mount Packaging: The RFN1LAM6STR is available in a surface-mount package, making it easy to integrate into a wide range of electronic devices.
  • RoHS Compliance: This diode is compliant with the RoHS3 directive, ensuring its suitability for use in environmentally friendly applications.

RFN1LAM6STR Applications

The RFN1LAM6STR is ideal for use in a variety of power electronics applications, including:

  1. Power Supplies: Its high voltage rating and fast recovery time make it suitable for use in power supply circuits, where high efficiency and reliability are critical.
  2. Motor Drives: The RFN1LAM6STR's ability to handle high currents and fast switching speeds make it an excellent choice for motor drive applications, where high performance and reliability are essential.
  3. Renewable Energy Systems: This diode's high voltage rating and fast recovery time make it well-suited for use in renewable energy systems, such as solar panels and wind turbines, where high efficiency and reliability are crucial.
  4. Automotive Applications: The RFN1LAM6STR's high current handling capabilities and fast recovery time make it an ideal choice for automotive applications, such as electric vehicle charging systems and power electronics.

Conclusion of RFN1LAM6STR

In conclusion, the RFN1LAM6STR from ROHM Semiconductor is a high-performance, general-purpose diode designed for use in a wide range of power electronics applications. Its fast recovery time, high current handling capabilities, and low reverse leakage current make it an excellent choice for applications requiring high efficiency and reliability. With its RoHS compliance and surface-mount packaging, the RFN1LAM6STR is an ideal solution for designers looking to incorporate high-performance diodes into their electronic devices.

FAQ

What is the mounting type of RFN1LAM6STR?
RFN1LAM6STR uses a Surface Mount mounting style based on the listed product specifications.
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