ROHM Semiconductor_RGTH60TS65DGC11
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ROHM Semiconductor
RGTH60TS65DGC11

279-RGTH60TS65DGC11
IGBT TRNCH FIELD 650V 58A TO247N
22 Weeks

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Tech Specifications

Reverse Recovery Time (trr)
58 ns
Product Status
Not For New Designs
Voltage - Collector Emitter Breakdown (Max)
650 V
Td (on/off) @ 25°C
27ns/105ns
Supplier Device Package
TO-247N
Package / Case
TO-247-3
REACH Status
REACH Unaffected
Mfr
Rohm Semiconductor
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RGTH60TS65DGC11 Description

RGTH60TS65DGC11 Description

The RGTH60TS65DGC11 is a high-performance IGBT (Insulated Gate Bipolar Transistor) from ROHM Semiconductor, designed for applications requiring robust power handling and efficient switching. This device features a Trench Field Stop IGBT type, offering improved electrical characteristics and reduced conduction losses. With a maximum collector-emitter breakdown voltage of 650V and a maximum collector current of 58A, the RGTH60TS65DGC11 is well-suited for a variety of high-power applications.

RGTH60TS65DGC11 Features

  • Technical Specifications:

    • Reverse Recovery Time (trr): 58 ns
    • Voltage - Collector Emitter Breakdown (Max): 650 V
    • Td (on/off) @ 25°C: 27ns/105ns
    • Current - Collector (Ic) (Max): 58 A
    • Current - Collector Pulsed (Icm): 120 A
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
    • Gate Charge: 58 nC
    • Power - Max: 194 W
  • Performance Benefits:

    • Low on-state voltage drop (Vce(on)) for high efficiency
    • Fast switching times (Td) for reduced switching losses
    • High current handling capability (Ic, Icm) for robust power management
  • Unique Advantages:

    • Trench Field Stop technology for improved electrical performance
    • Through-hole mounting type for easy integration into existing designs
    • REACH Unaffected and ROHS3 Compliant for environmental compliance

RGTH60TS65DGC11 Applications

The RGTH60TS65DGC11 is ideal for a variety of high-power applications, including:

  • Industrial Motor Control: Utilize the RGTH60TS65DGC11 in motor drive circuits for efficient power control and high torque.
  • Power Supplies: Implement this IGBT in power supply designs to handle high current loads and maintain efficiency.
  • Renewable Energy Systems: Use the RGTH60TS65DGC11 in solar inverters and wind turbine converters for reliable energy conversion.

Conclusion of RGTH60TS65DGC11

The RGTH60TS65DGC11 from ROHM Semiconductor is a powerful and efficient IGBT solution for high-power applications. Its unique Trench Field Stop technology, combined with its robust electrical characteristics, make it an ideal choice for demanding power management tasks. With its compliance to environmental regulations and ease of integration, the RGTH60TS65DGC11 is a reliable and efficient choice for a variety of industrial and renewable energy applications.

FAQ

What operating temperature range does RGTH60TS65DGC11 support?
RGTH60TS65DGC11 has an operating temperature range of -40°C ~ 175°C (TJ).
What is the standard lead time for RGTH60TS65DGC11?
What is the mounting type of RGTH60TS65DGC11?
What voltage specification is listed for RGTH60TS65DGC11?
Are there related or alternative parts for RGTH60TS65DGC11?
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