ROHM Semiconductor_RQ3E070BNTB1
original

ROHM Semiconductor
RQ3E070BNTB1

278-RQ3E070BNTB1
PDF Datasheet
NCH 30V 15A POWER MOSFET: RQ3E07
16 Weeks

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Tech Specifications

Configuration
Single Quad Drain Triple Source
Typical Turn-Off Delay Time (ns)
23
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
410 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
8.9 nC @ 10 V
Typical Rise Time (ns)
8
PPAP
No
Channel Mode
Enhancement
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RQ3E070BNTB1 Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the RQ3E070BNTB1 belongs to can be classified under the Discrete Semiconductors. RQ3E070BNTB1 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. RQ3E070BNTB1 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. ROHM Semiconductor plays a crucial role in ensuring the smooth flow of goods and meeting market demand. ROHM Semiconductor is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, ROHM Semiconductor builds trust with consumers and enhances the overall reputation of their products.

FAQ

What package or case is RQ3E070BNTB1 available in?
RQ3E070BNTB1 is available in the 8-PowerVDFN package / case.
What is the standard lead time for RQ3E070BNTB1?
What is the mounting type of RQ3E070BNTB1?
What operating temperature range does RQ3E070BNTB1 support?
What voltage specification is listed for RQ3E070BNTB1?
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