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RQ3E100BNTB

RQ3E100BNTB Description

The RQ3E100BNTB is a high-performance MOSFET (Metal Oxide) device manufactured by ROHM Semiconductor. It is a single N-Channel FET with a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 10A at 25°C. This device is designed for surface mount applications and is available in a tape and reel (TR) packaging. With a maximum power dissipation of 2W at ambient temperature (Ta), the RQ3E100BNTB is suitable for various high-power electronic applications.

RQ3E100BNTB Features

• Technical Specifications:

  • Input Capacitance (Ciss): 1100 pF @ 15V
  • Gate Charge (Qg): 22 nC @ 10V
  • Vgs (Max): ±20V
  • Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Drive Voltage: 4.5V (Max Rds On), 10V (Min Rds On)
  • Operating Temperature: 150°C (TJ)
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

• Performance Benefits:

  • Low Rds On (10.4mOhm) for high efficiency and low power loss
  • High input capacitance (1100 pF) for fast switching speeds
  • Low gate charge (22 nC) for reduced gate drive power requirements
  • Wide operating temperature range (up to 150°C) for reliability in harsh environments

• Compliance and Certifications:

  • REACH Unaffected
  • ROHS3 Compliant
  • ECCN: EAR99

RQ3E100BNTB Applications

The RQ3E100BNTB is ideal for various high-power electronic applications, including:

1. Power Management: Due to its low Rds On and high Vdss, the RQ3E100BNTB is suitable for power management circuits in consumer electronics, industrial equipment, and automotive systems.
2. Motor Control: The device's high current handling capability (10A) makes it an excellent choice for motor control applications, such as electric vehicles, robotics, and industrial automation.
3. Switching Regulators: The RQ3E100BNTB's fast switching speeds and low gate charge make it suitable for high-efficiency switching regulators in power supply designs.

Conclusion of RQ3E100BNTB

The RQ3E100BNTB from ROHM Semiconductor is a high-performance, single N-Channel MOSFET designed for high-power applications. Its unique combination of low Rds On, high Vdss, and fast switching speeds make it an ideal choice for power management, motor control, and switching regulator applications. With its compliance to REACH and ROHS regulations, the RQ3E100BNTB is a reliable and environmentally friendly solution for demanding electronic designs.