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RQ3E180AJTB

RQ3E180AJTB Description

The RQ3E180AJTB is a high-performance N-Channel MOSFET from ROHM Semiconductor. It features a maximum drain-source voltage (Vdss) of 30V and can handle continuous drain currents of 18A at ambient temperature (Ta) and 30A at case temperature (Tc). The device operates within an input capacitance (Ciss) range of up to 4290 pF at 15V and has a gate charge (Qg) of up to 39 nC at 4.5V. With a low on-resistance (Rds On) of 4.5mOhm at 18A and 4.5V, the RQ3E180AJTB offers efficient power dissipation, rated at 2W at ambient temperature and 30W at case temperature.

RQ3E180AJTB Features

• High Voltage and Current Handling: The RQ3E180AJTB can handle high voltages and currents, making it suitable for demanding power management applications.
• Low On-Resistance: The low Rds On of 4.5mOhm at 18A and 4.5V contributes to high efficiency and reduced power losses.
• Surface Mount Technology: The surface mount packaging allows for compact and efficient integration into various electronic devices.
• Compliance and Certification: The RQ3E180AJTB is compliant with ROHS3 and REACH regulations, ensuring environmental and safety standards are met.
• Operating Temperature Range: With an operating junction temperature of up to 150°C, the device is suitable for high-temperature applications.

RQ3E180AJTB Applications

The RQ3E180AJTB is ideal for a variety of applications where high voltage and current handling are required, such as:

• Power Management Systems: Due to its high voltage and current ratings, it is suitable for power conversion and regulation in various electronic devices.
• Automotive Electronics: The device's high temperature tolerance makes it suitable for automotive applications where components are subjected to harsh environmental conditions.
• Industrial Controls: Its robust performance characteristics make it a good fit for industrial control systems that require reliable and efficient power management.

Conclusion of RQ3E180AJTB

The RQ3E180AJTB from ROHM Semiconductor is a robust N-Channel MOSFET designed for high-voltage and high-current applications. Its low on-resistance, high compliance with environmental standards, and ability to operate at high temperatures make it a reliable choice for power management in various industries. With its performance benefits and unique features, the RQ3E180AJTB stands out as a preferred component in demanding electronic systems.