ROHM Semiconductor_RQ3G100GNTB
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ROHM Semiconductor
RQ3G100GNTB

278-RQ3G100GNTB
PDF Datasheet
MOSFET N-CH 40V 10A 8HSMT
21 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
615 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs
8.4 nC @ 10 V
Product Status
Active
Supplier Device Package
8-HSMT (3.2x3)
Drain to Source Voltage (Vdss)
40 V
Power Dissipation (Max)
2W (Ta)
Package / Case
8-PowerVDFN
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RQ3G100GNTB Description

RQ3G100GNTB Description

The RQ3G100GNTB is a high-performance MOSFET (Metal Oxide) designed and manufactured by ROHM Semiconductor. This N-Channel device offers a unique combination of technical specifications and performance benefits, making it an ideal choice for various applications in the electronics industry. With a drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) of 10A at 25°C, the RQ3G100GNTB delivers exceptional power handling capabilities. Its low on-resistance (Rds On) of 14.3mOhm at 10A and 10V ensures efficient power dissipation, while the gate charge (Qg) of 8.4nC at 10V and input capacitance (Ciss) of 615pF at 20V contribute to fast switching speeds and reduced power consumption.

RQ3G100GNTB Features

  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 10A at 25°C
  • On-Resistance (Rds On): 14.3mOhm at 10A and 10V
  • Gate Charge (Qg): 8.4nC at 10V
  • Input Capacitance (Ciss): 615pF at 20V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package: Tape & Reel (TR)
  • RoHS Compliance: ROHS3 Compliant
  • REACH Status: REACH Unaffected
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

RQ3G100GNTB Applications

The RQ3G100GNTB is ideal for applications that require high power handling, fast switching speeds, and low power consumption. Some specific use cases include:

  1. Power Electronics: In power supplies, motor drives, and inverters, the RQ3G100GNTB's high voltage and current ratings make it suitable for efficient power conversion and control.
  2. Automotive Electronics: The device's robust performance and temperature range make it suitable for automotive applications such as electric vehicle charging systems, battery management, and powertrain control.
  3. Industrial Control Systems: In industrial automation and control systems, the RQ3G100GNTB can be used for motor control, power distribution, and signal processing applications.

Conclusion of RQ3G100GNTB

The RQ3G100GNTB from ROHM Semiconductor is a versatile and high-performance MOSFET that offers a unique combination of technical specifications and performance benefits. Its low on-resistance, fast switching speeds, and robust power handling capabilities make it an ideal choice for a wide range of applications in the electronics industry. With its RoHS3 compliance and REACH unaffected status, the RQ3G100GNTB is also environmentally friendly, making it a responsible choice for manufacturers and designers.

FAQ

What operating temperature range does RQ3G100GNTB support?
RQ3G100GNTB has an operating temperature range of 150°C (TJ).
Is RQ3G100GNTB currently in stock?
What is the standard lead time for RQ3G100GNTB?
What is RQ3G100GNTB?
What is the mounting type of RQ3G100GNTB?
Availability (In Stock : 4251 )
Quantity Unit Price Ext. Price
10+ $0.36000 $3.60
30+ $0.32057 $9.62
100+ $0.26915 $26.91
500+ $0.24685 $123.43
1000+ $0.23315 $233.15
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