ROHM Semiconductor_RQ6L020SPTCR
original

ROHM Semiconductor
RQ6L020SPTCR

278-RQ6L020SPTCR
PDF Datasheet
MOSFET P-CH 60V 2A TSMT6
40 Weeks

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Tech Specifications

Configuration
Single Quad Drain
Typical Turn-Off Delay Time (ns)
45
Input Capacitance (Ciss) (Max) @ Vds
750 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs
7.2 nC @ 5 V
Typical Rise Time (ns)
12
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
9
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RQ6L020SPTCR Description

RQ6L020SPTCR Description

The RQ6L020SPTCR is a high-performance MOSFET (Metal Oxide) from ROHM Semiconductor, designed for single FET applications. This P-Channel device offers a maximum drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 2A at 25°C. With a surface-mount packaging, it is suitable for a wide range of electronic devices.

RQ6L020SPTCR Features

  • Technical Specifications:

    • Maximum Input Capacitance (Ciss): 750 pF @ 10V
    • Maximum Gate Charge (Qg): 7.2 nC @ 5V
    • Maximum Vgs: ±20V
    • Maximum Power Dissipation: 1.25W (Ta)
    • Operating Temperature: 150°C (TJ)
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • RoHS Compliance: ROHS3
    • REACH Status: REACH Unaffected
    • ECCN: EAR99
    • HTSUS: 8541.29.0095
  • Performance Benefits:

    • Low Rds On (Maximum): 210mOhm @ 2A, 10V
    • Low Vgs(th) (Maximum): 3V @ 1mA
    • Drive Voltage: 4V (Max Rds On), 10V (Min Rds On)
  • Unique Features and Advantages:

    • High input capacitance and low gate charge contribute to fast switching speeds and low power consumption.
    • The low Rds On and low Vgs(th) make it ideal for applications requiring high efficiency and low power loss.
    • The device's high Vdss and Id ratings make it suitable for high-voltage and high-current applications.

RQ6L020SPTCR Applications

The RQ6L020SPTCR is ideal for various applications, including:

  1. Power Management: Its high Vdss and Id ratings make it suitable for power management circuits in consumer electronics, industrial equipment, and automotive systems.
  2. Motor Control: The device's low Rds On and high Vdss ratings make it ideal for motor control applications, such as brushless DC motors and stepper motors.
  3. Switching Applications: The low gate charge and fast switching speeds make it suitable for high-frequency switching applications, such as power supplies and converters.
  4. Automotive: The device's high temperature rating and robust performance make it suitable for automotive applications, such as engine control units and power windows.

Conclusion of RQ6L020SPTCR

The RQ6L020SPTCR from ROHM Semiconductor is a high-performance MOSFET designed for single FET applications. Its unique combination of high Vdss, low Rds On, and low gate charge make it an ideal choice for high-voltage, high-current, and high-efficiency applications. With its robust performance and compliance with RoHS and REACH regulations, the RQ6L020SPTCR is a reliable and eco-friendly solution for a wide range of electronic devices.

FAQ

What operating temperature range does RQ6L020SPTCR support?
RQ6L020SPTCR has an operating temperature range of 150°C (TJ).
What package or case is RQ6L020SPTCR available in?
What is the standard lead time for RQ6L020SPTCR?
What voltage specification is listed for RQ6L020SPTCR?
What is RQ6L020SPTCR?
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